High-pass filter circuit and band-pass filter circuit
US-2015229293-A1 · Aug 13, 2015 · US
Solid-state image sensing device with electrode implanted into deep trench
US9508871B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9508871-B2 |
| Application number | US-201514847567-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 8, 2015 |
| Priority date | Nov 4, 2014 |
| Publication date | Nov 29, 2016 |
| Grant date | Nov 29, 2016 |
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Abstract
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A solid-state image sensing device is provided including a first semi-conducting layer of first conductivity, a second semi-conducting layer of first conductivity disposed on the first semi-conducting layer, a semiconductor region of second conductivity different from the first conductivity disposed in the second semi-conducting layer, a deep trench configured to isolate a plurality of neighboring pixels from each other, and an electrode implanted into the deep trench, where the semiconductor region of second conductivity, the second semi-conducting layer, and the first semi-conducting layer are disposed in that order from a proximal side to a distal side, the second semi-conducting layer is split by the deep trench into sections that correspond to the pixels, an impurity concentration of first conductivity of the first semi-conducting layer is higher than an impurity concentration of first conductivity of the second semi-conducting layer, and the deep trench contacts the first semi-conducting layer.
First claim
Opening claim text (preview).
What is claimed is: 1. A solid-state image sensing device including a plurality of pixels, comprising: a first semi-conducting layer of first conductivity; a second semi-conducting layer of first conductivity disposed on the first semi-conducting layer; a semiconductor region of second conductivity different from the first conductivity disposed in the second semi-conducting layer; a deep trench provided for each of the plurality of pixels and configured to isolate the neighb…
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- H01L29/868Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US9508871B2 cover?
- A solid-state image sensing device is provided including a first semi-conducting layer of first conductivity, a second semi-conducting layer of first conductivity disposed on the first semi-conducting layer, a semiconductor region of second conductivity different from the first conductivity disposed in the second semi-conducting layer, a deep trench configured to isolate a plurality of neighbor…
- Who is the assignee on this patent?
- Sakurano Katsuyuki, Negoro Takaaki, Ueda Yoshinori, and 5 more
- What technology area does this patent fall under?
- Primary CPC classification H01L29/868. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Nov 29 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 5 related publications on this page (citations in our corpus or others sharing the same primary CPC).