Short-gate tunneling field effect transistor having non-uniformly doped vertical channel and fabrication method thereof

Patent metadata

Field	Value
Publication number	US-9508839-B2
Application number	US-201314771627-A
Country	US
Kind code	B2
Filing date	Sep 30, 2013
Priority date	Mar 18, 2013
Publication date	Nov 29, 2016
Grant date	Nov 29, 2016

Abstract

The present invention discloses a short-gate tunneling field effect transistor having a non-uniformly doped vertical channel and a fabrication method thereof. The short-gate tunneling field effect transistor has a vertical channel and the channel region is doped in such a slowly-varied and non-uniform manner that a doping concentration in the channel region appears as a Gaussian distribution along a vertical direction and the doping concentration in the channel near the drain region is higher while the doping concentration in the channel near the source region is lower; and double control gates are formed at both sides of the vertical channel and the control gates form an L-shaped short-gate structure, so that a gate underlapped region is formed in the channel near the drain region, and a gate overlapped region is formed at the source region.

First claim

What claimed is:

1. A short-gate tunneling field effect transistor comprising two source regions, a drain region, a vertical channel region and control gates, wherein the vertical channel region is doped in a non-uniform manner such that a doping concentration in the vertical channel region near the drain region is higher than a doping concentration in the vertical channel region near the source regions, wherein the source regions are located at both sides of the vertical channel region, and wherein the control gates are formed at both sides of the vertical channel region and the control gates form an L-shaped short-gate structure respectively, so that gate underlapped regions are formed in the vertical channel region near the drain region, and gate overlapped regions are formed at the source regions.

2. The short-gate tunneling field effect transistor of claim 1 , wherein the doping concentration in the vertical channel region near the source regions is 2-3 orders of magnitude lower than the doping concentration in the vertical channel region near the drain region.

3. The short-gate tunneling field effect transistor of claim 1 , wherein, for an N-type transistor, the source regions are heavily P-type doped and the drain region is heavily N-type doped, and the vertical channel region is P-type doped in the non-uniform manner; for a P-type transistor, the source regions are heavily N-type doped and the drain region is heavily P-type doped, and the vertical channel region is N-type doped in the non-uniform manner.

4. The short-gate tunneling field effect transistor of claim 1 , wherein the doping concentration in the vertical channel region near the drain region has a value in a range of 1×10 14 cm −3 -1×10 17 cm −3 .

5. The short-gate tunneling field effect transistor of claim 1 , wherein the control gates comprise a material selected from doped polysilicon, metal cobalt, or nickel.

6. The short-gate tunneling field effect transistor of claim 1 , wherein the source regions are implanted with impurities.

7. The short-gate tunneling field effect transistor of claim 6 , wherein the impurities comprise BF 2 .

8. A fabrication method of the short-gate tunneling field effect transistor of claim 1 having the non-uniformly doped vertical channel region, wherein the method comprises the following steps:
(1) preparing a substrate: a lightly doped or undoped semiconductor substrate;
(2) performing an initial thermal oxidation and depositing a nitride layer on the substrate, and defining a pattern for the vertical channel region by a photolithography process;
(3) forming the vertical channel region by etching and exposing the source regions, and implanting impurities into the source regions;
(4) removing the nitride layer that was previously deposited and an oxide that was previously grown, and re-growing a gate dielectric layer and depositing a gate material layer;
(5) depositing a mask layer, a thickness of which is a length of a vertical short-gate of the transistor, and removing the gate material layer not covered by the mask layer to form the L-shaped short-gate structure;
(6) depositing another mask layer and performing ion implantation with a high energy and a low dosage to form the non-uniform doping for the vertical channel region, the doping concentration near the drain region being 1×10 14 -1×10 17 cm −3 ;
(7) performing ion implantation with a low energy and a high dosage to implant impurities to the drain region, a doping concentration being 1×10 19 -1×10 21 cm −3 ;
(8) performing rapid high temperature annealing to activate the impurities; and
(9) depositing a passivation layer, opening a contact hole and performing metallization.

9. The fabrication method of claim 8 , wherein, in the step (1), a material of the semiconductor substrate is selected from Si, Ge, SiGe, GaAs or other binary or ternary compound semiconductors of Group II-VI, III-V, IV-IV, silicon on insulator or germanium on insulator.

10. The fabrication method of claim 8 , wherein, in the step (4), a material of the gate dielectric layer is selected from SiO 2 or Si 3 N 4 .

11. The fabrication method of claim 8 , wherein, in the step (4), a method for re-growing the gate dielectric layer is selected from one of the following methods: conventional thermal oxidation, nitrating thermal oxidation, chemical vapor deposition, and physical vapor deposition.

12. The fabrication method of claim 8 , wherein, in the step 4), a material of the gate material layer is selected from doped polysilicon, metal cobalt, or nickel.

Assignees

• Univ Beijing

Inventors

• Huang Ru
• Wu Chunlei
• Huang Qianqian
• Wang Chao
• Wang Jiaxin
• Wang Yangyuan

Classifications

• H10P30/22

  using masks · CPC title

• H10D64/01344

  in a nitrogen-containing ambient, e.g. N2O oxidation · CPC title

• H10D64/01342

  by deposition, e.g. evaporation, ALD or laser deposition (H10D64/01344 takes precedence) · CPC title

• H10D64/693

  the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials · CPC title

• H10D64/665

  the conductor comprising a layer of elemental metal contacting the insulator, e.g. tungsten or molybdenum (having lateral variation H10D64/671) · CPC title