Solid-state image pickup device

Patent metadata

Field	Value
Publication number	US-9508773-B2
Application number	US-201514804764-A
Country	US
Kind code	B2
Filing date	Jul 21, 2015
Priority date	Feb 4, 2004
Publication date	Nov 29, 2016
Grant date	Nov 29, 2016

Abstract

A solid-state image pickup device 1 according to the present invention includes a semiconductor substrate 2 on which a pixel 20 composed of a photodiode 3 and a transistor is formed. The transistor comprising the pixel 20 is formed on the surface of the semiconductor substrate, a pn junction portion formed between high concentration regions of the photodiode 3 is provided within the semiconductor substrate 2 and a part of the pn junction portion of the photodiode 3 is extended to a lower portion of the transistor formed on the surface of the semiconductor substrate 2 . According to the present invention, there is provided a solid-state image pickup device in which a pixel size can be microminiaturized without lowering a saturated electric charge amount (Qs) and sensitivity.

First claim

What is claimed is:

1. A solid-state image pickup device comprising:
a photodiode in a semiconductor substrate, a groove portion is an indentation in semiconductor substrate that extends from a surface of the semiconductor substrate to the photodiode;
a floating diffusion region of the semiconductor substrate at the surface of the semiconductor substrate, a portion of the semiconductor substrate separates the photodiode from the floating diffusion region;
a gate insulating fil…

Assignees

• Sony Corp

Inventors

• Ezaki Takayuki
• Hirayama Teruo

Classifications

• H01L27/14689

  Electricity · mapped topic

• H01L31/02

  Electricity · mapped topic

• H01L27/1464

  Electricity · mapped topic

• H01L27/14603

  Electricity · mapped topic

• H01L27/14612

  Electricity · mapped topic