Semiconductor device having switching transistor that includes oxide semiconductor material

Patent metadata

Field	Value
Publication number	US-9508742-B2
Application number	US-201514957709-A
Country	US
Kind code	B2
Filing date	Dec 3, 2015
Priority date	Dec 11, 2009
Publication date	Nov 29, 2016
Grant date	Nov 29, 2016

Abstract

One object is to provide a new semiconductor device whose standby power is sufficiently reduced. The semiconductor device includes a first power supply terminal, a second power supply terminal, a switching transistor using an oxide semiconductor material and an integrated circuit. The first power supply terminal is electrically connected to one of a source terminal and a drain terminal of the switching transistor. The other of the source terminal and the drain terminal of the switching transistor is electrically connected to one terminal of the integrated circuit. The other terminal of the integrated circuit is electrically connected to the second power supply terminal.

First claim

The invention claimed is:

1. A semiconductor device comprising:
a first circuit block;
a second circuit block, each of the first circuit block and the second circuit block comprising a CMOS circuit, the CMOS circuit comprising a p-channel transistor and an n-channel transistor;
an insulating layer over the CMOS circuit; and
a switching element over the insulating layer, wherein the first circuit block is electrically connected to the second circuit block through the switchin…

Assignees

• Semiconductor Energy Lab

Inventors

• Yamazaki Shunpei

Classifications

• H10W20/43

  Electricity · mapped topic

• H03K3/012

  Electricity · mapped topic

• H10D30/6755 Primary

  Electricity · mapped topic

• H10D62/80

  Electricity · mapped topic

• H10D62/83

  Electricity · mapped topic