Integrated Assemblies Having Conductive Posts Extending Through Stacks of Alternating Materials
US-2024237336-A9 · Jul 11, 2024 · US
US9508734B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9508734-B2 |
| Application number | US-201615077892-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 22, 2016 |
| Priority date | Jun 11, 2013 |
| Publication date | Nov 29, 2016 |
| Grant date | Nov 29, 2016 |
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Official abstract text for this publication.
A silicon-oxide-nitride-oxide-silicon (SONOS) device is disclosed. The SONOS device includes a substrate; a first oxide layer on the substrate; a silicon-rich trapping layer on the first oxide layer; a nitrogen-containing layer on the silicon-rich trapping layer; a silicon-rich oxide layer on the nitrogen-containing layer; and a polysilicon layer on the silicon-rich oxide layer.
Opening claim text (preview).
What is claimed is: 1. A silicon-oxide-nitride-oxide-silicon (SONOS) device, comprising: a substrate; a first oxide layer on the substrate; a silicon-rich trapping layer on the first oxide layer, wherein the silicon-rich trapping layer comprises a silicon nitride (SiN) layer and a silicon-rich SiN layer; a nitrogen-containing layer on the silicon-rich trapping layer; a silicon-rich oxide layer on the nitrogen-containing layer; and a polysilicon layer on the silicon-rich…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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