Trench to trench fin short mitigation

Patent metadata

Field	Value
Publication number	US-9508725-B2
Application number	US-201514667800-A
Country	US
Kind code	B2
Filing date	Mar 25, 2015
Priority date	Mar 25, 2015
Publication date	Nov 29, 2016
Grant date	Nov 29, 2016

Abstract

A semiconductor structure includes a replacement strap for a finFET fin that provides communication between a storage capacitor and the fin. The storage capacitor is located in a deep trench formed in a substrate and the fin is formed on a surface of the substrate. The replacement strap allows for electrical connection of the fin to the storage capacitor and is in direct physical communication with the fin and the storage capacitor. The replacement strap may be formed by removing a sacrificial strap and merging epitaxially grown material from the fin and epitaxially grown material from the capacitor. The epitaxially grown material grown from the fin grows at a slower rate relative to the epitaxially grown material grown from the capacitor. By removing the sacrificial strap prior to forming the replacement strap, epitaxial overgrowth that may cause shorts between adjacent capacitors is limited.

First claim

The invention claimed is:

1. A semiconductor device fabrication process comprising:
forming a fin layer upon a semiconductor substrate;
forming a deep trench within the fin layer and within the substrate;
forming a capacitor within the deep trench;
forming sacrificial strap material upon the capacitor within the deep trench;
forming a fin by removing portions of the fin layer;
forming a sacrificial strap by removing portions of the sacrificial strap material, the sacrifi…

Assignees

• IBM

Inventors

• Basker Veeraraghavan S
• Reznicek Alexander

Classifications

• H10D30/6219

  Electricity · mapped topic

• H10D84/834

  Electricity · mapped topic

• H10D84/0158 Primary

  Electricity · mapped topic

• H10D84/038

  Electricity · mapped topic

• H10D30/6217

  Electricity · mapped topic