Semiconductor device with bipolar junction transistor cells

Patent metadata

Field	Value
Publication number	US-9508711-B2
Application number	US-201314096338-A
Country	US
Kind code	B2
Filing date	Dec 4, 2013
Priority date	Dec 4, 2013
Publication date	Nov 29, 2016
Grant date	Nov 29, 2016

Abstract

A semiconductor device includes a bipolar junction transistor cell including an emitter region which is at least partly formed between mesas of a semiconductor body. The emitter region extends between a first surface of the semiconductor body and an emitter bottom plane. The transistor cell further includes a collector region and a base region that separates the emitter region and the collector region.

First claim

What is claimed is:

1. A semiconductor device comprising a bipolar junction transistor cell that comprises:
a semiconductor body comprising mesas protruding from a layer section, wherein top surfaces of the mesas are coplanar with a first surface of the semiconductor body;
an emitter region partly formed between two neighboring ones of the mesas, and extending between a plane spanned by the coplanar top surfaces of the mesas and an emitter bottom plane in the semiconductor body, wherein the emitter bottom plane is between the plane spanned by the coplanar top surfaces of the mesas and the layer section;
a collector region at least partly formed in the mesas of the semiconductor body and extending from the first surface to a pedestal layer in the semiconductor body; and
a base region separating the emitter region and the collector region and comprising first base portions extending along sidewalls of the mesas, wherein the sidewalls are tilted to the top surfaces.

2. The semiconductor device of claim 1 , wherein
a distance between the first surface and the pedestal layer is greater than a distance between the first surface and the emitter bottom plane.

3. The semiconductor device of claim 1 , wherein
the base region further comprises a second base portion between the mesas and connecting the first base portions.

4. The semiconductor device of claim 3 , wherein
the base region further comprises third base portions in the vertical projection of the mesas, each third base portion connected to one of the first base portions.

5. The semiconductor device of claim 4 , wherein
the third base portions extend over the complete vertical projection of the mesas.

6. The semiconductor device of claim 5 , wherein
the emitter region comprises a first and a second sub-region formed on opposing sides of a base contact structure extending between the mesas from the first surface to the second portion of the base region.

7. The semiconductor device of claim 6 , wherein
the emitter region comprises third sub-regions in the vertical projection of the mesas.

8. The semiconductor device of claim 6 , wherein
the emitter region is completely formed between the mesas.

9. The semiconductor device of claim 1 , further comprising:
a plurality of the bipolar junction transistor cells.

10. The semiconductor device of claim 9 , wherein
the plurality of the bipolar junction transistor cells is arranged in a regular pattern.

11. The semiconductor device of claim 1 , further comprising:
an anode region formed between second mesas of the semiconductor body and a cathode region formed at least partly in the mesas, the anode and cathode regions arranged to form a diode.

12. The semiconductor device of claim 1 , further comprising:
an insulator structure formed between third mesas of the semiconductor body.

13. The semiconductor device of claim 1 , wherein
the semiconductor body, the base region and the emitter region comprise silicon carbide.

14. The semiconductor device of claim 1 , wherein
in the emitter region a vertical impurity concentration profile perpendicular to the first surface is constant.

Assignees

• Infineon Technologies Ag

Inventors

• Konrath Jens Peter
• Schulze Hans-Joachim

Classifications

• H10D84/617

  Combinations of vertical BJTs and only diodes · CPC title

• H10D64/231

  Emitter or collector electrodes for bipolar transistors · CPC title

• H10D62/8325

  Silicon carbide · CPC title

• H10D62/177

  Base regions of bipolar transistors, e.g. BJTs or IGBTs · CPC title

• H10D62/133

  Emitter regions of BJTs · CPC title