Semiconductor device with heat sinks

Patent metadata

Field	Value
Publication number	US-9508693-B2
Application number	US-201414500840-A
Country	US
Kind code	B2
Filing date	Sep 29, 2014
Priority date	Nov 6, 2013
Publication date	Nov 29, 2016
Grant date	Nov 29, 2016

Abstract

An integrated heat sink array is introduced in SOI power devices having multiple unit cells, which can be used to reduce the temperature rise in obtaining more uniform temperature peaks for all the unit cells across the device area, so that the hot spot which is prone to breakdown can be avoided, thus the safe operating area of the device can be improved. Also the array sacrifice less area of the device, therefore results in low Rdson.

First claim

The invention claimed is:

1. A semiconductor device comprising a heat sink array, the heat sink array comprising: one or more inner heat sink elements; and one or more outer heat sink elements, said inner heat sink elements and said outer heat sink elements each having a thermal conductance, wherein the thermal conductance of at least one of said inner heat sink elements is greater than the thermal conductance of said outer heat sink elements, wherein each of said inner heat sink elements and said outer heat sink elements comprises separated heat sink plugs, wherein spacing between adjacent heat sink plugs at the center of the semiconductor device is smaller than spacing between adjacent heat sink plugs moving away from the center of the semiconductor device, and wherein said inner heat sink elements and said outer heat sink elements having different volumes.

2. The semiconductor device of claim 1 , said inner heat sink elements having a first volume and said outer heat sink elements having a second volume, wherein the first volume is greater than the second volume.

3. The semiconductor device of claim 2 , said inner heat sink elements having a first cross-sectional area and said outer heat sink elements having a second cross-sectional area, wherein the first cross-sectional area is greater than the second cross-sectional area.

4. The semiconductor device of claim 1 , a plurality of said inner heat sink elements having a first density and a plurality of said outer heat sink elements having a second density, wherein the first density is greater than the second density.

5. The semiconductor device of claim 1 , further comprising intermediate heat sink elements disposed between the inner heat sink elements and said outer heat sink elements, and having a thermal conductance intermediate that of said inner heat sink elements and said outer heat sink elements.

6. The semiconductor device of claim 1 , wherein each of the heat sink elements is disposed on a corresponding semiconductor die.

7. The semiconductor device of claim 6 , wherein the semiconductor dies are arranged as an array.

8. The semiconductor device of claim 7 , wherein the semiconductor dies are silicon on insulator structures.

9. The semiconductor device of claim 8 , wherein the semiconductor dies are MOSFETs.

10. The semiconductor device of any of claim 7 , wherein each of the semiconductor dies arranged as an array share a common substrate.

11. The semiconductor device of claim 1 , wherein the heat sink array and an array of semiconductor dies are arrays where the number of silicon on insulator structures in all rows of the arrays is the same and where the number of silicon on insulator structures in all columns of the arrays is the same.

12. The semiconductor device of claim 11 , wherein the arrays comprise an n×m array, where n and m are positive integers.

13. The semiconductor device of claim 1 , wherein the heat sink array and an array of semiconductor dies are triangular arrays.

14. The semiconductor device of claim 1 , further comprising an isolation ring is provided around the periphery of said device.

15. A semiconductor device comprising a heat sink array, the heat sink array comprising: one or more inner heat sink elements; and one or more outer heat sink elements, said inner heat sink elements and said outer heat sink elements each having a thermal conductance, wherein the thermal conductance of at least one of said inner heat sink elements is greater than the thermal conductance of said outer heat sink elements, wherein each of said inner heat sink elements and said outer heat sink elements comprises separated heat sink plugs, wherein spacing between adjacent heat sink plugs at the center of the semiconductor device is smaller than spacing between adjacent heat sink plugs moving away from the center of the semiconductor device, and wherein each of the heat sink elements is disposed on a corresponding semiconductor die.

Assignees

• Nxp Bv

Inventors

• Yan Liang
• Daamen Roel
• Heringa Anco
• Hijzen Erwin

Classifications

• H10W40/228 Primary

  the projecting parts being wire-shaped or pin-shaped · CPC title

• H10W90/00 Primary

  Package configurations · CPC title

• H10D62/116

  adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions · CPC title

• H10D89/105

  adapted for thermal considerations · CPC title

• H10D86/201

  the substrates comprising an insulating layer on a semiconductor body, e.g. SOI (H10D86/40 take precedence) · CPC title