Semiconductor device and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-9508620-B2
Application number	US-201514704303-A
Country	US
Kind code	B2
Filing date	May 5, 2015
Priority date	Oct 30, 2002
Publication date	Nov 29, 2016
Grant date	Nov 29, 2016

Abstract

It is an object of the present invention to provide a peeling method that causes no damage to a layer to be peeled and to allow not only a layer to be peeled with a small surface area but also a layer to be peeled with a large surface area to be peeled entirely. Further, it is also an object of the present invention to bond a layer to be peeled to various base materials to provide a lighter semiconductor device and a manufacturing method thereof. Particularly, it is an object to bond various elements typified by a TFT, (a thin film diode, a photoelectric conversion element comprising a PIN junction of silicon, or a silicon resistance element) to a flexible film to provide a lighter semiconductor device and a manufacturing method thereof.

First claim

What is claimed is:

1. A method of manufacturing a display device, comprising the steps of:
forming a metal layer over a substrate;
forming an oxide layer in contact with the metal layer;
forming a layer having a light-emitting element over the oxide layer;
forming a metal oxide layer by oxidizing the metal layer;
bonding a support to the layer; and
separating the layer from the substrate within the metal oxide layer or at an interface between the metal oxide layer and the oxide layer.

2. A method of manufacturing a display device, comprising the steps of:
forming a metal layer over a substrate;
forming an oxide layer in contact with the metal layer;
forming a layer having a light-emitting element over the oxide layer;
forming a metal oxide layer by oxidizing the metal layer;
bonding a sealing material to the layer; and
separating the layer from the substrate within the metal oxide layer or at an interface between the metal oxide layer and the oxide layer.

3. The method of manufacturing a display device according to claim 1 , wherein the light-emitting element is configured to emit white light.

4. The method of manufacturing a display device according to claim 2 , wherein the light-emitting element is configured to emit white light.

5. The method of manufacturing a display device according to claim 1 , wherein a light emitted from the light-emitting element is configured to pass through a color filter and to be extracted to an outside of the display device.

6. The method of manufacturing a display device according to claim 2 , wherein a light emitted from the light-emitting element is configured to pass through a color filter and to be extracted to an outside of the display device.

7. The method of manufacturing a display device according to claim 1 ,
wherein the light-emitting element comprises a plurality of light-emitting layers, and
wherein each of the plurality of light-emitting layers is configured to emit light of red, green, or blue.

8. The method of manufacturing a display device according to claim 2 ,
wherein the light-emitting element comprises a plurality of light-emitting layers, and
wherein each of the plurality of light-emitting layers is configured to emit light of red, green, or blue.

9. The method of manufacturing a display device according to claim 1 , wherein the metal layer comprises a metal element selected from Ti, Ta, W, Mo, Cr, Nd, Fe, Ni, Co, Zr, and Zn.

10. The method of manufacturing a display device according to claim 2 , wherein the metal layer comprises a metal element selected from Ti, Ta, W, Mo, Cr, Nd, Fe, Ni, Co, Zr, and Zn.

11. The method of manufacturing a display device according to claim 1 , wherein the step of oxidizing is performed by laser irradiation or heat treatment.

12. The method of manufacturing a display device according to claim 2 , wherein the step of oxidizing is performed by laser irradiation or heat treatment.

13. The method of manufacturing a display device according to claim 1 , wherein the support has flexibility.

14. The method of manufacturing a display device according to claim 2 , wherein the sealing material has flexibility.

Assignees

• Semiconductor Energy Lab

Inventors

• Yamazaki Shunpei
• Takayama Toru
• Maruyama Junya
• Ohno Yumiko

Classifications

• H10P72/7434

  used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate · CPC title

• H10W74/43

  comprising oxides, nitrides or carbides, e.g. ceramics or glasses · CPC title

• H10D30/0321

  comprising silicon, e.g. amorphous silicon or polysilicon · CPC title

• H10D86/60

  wherein the TFTs are in active matrices · CPC title

• H10D86/40

  characterised by multiple TFTs · CPC title