Coil component
US-2024331933-A1 · Oct 3, 2024 · US
Vertical slow-wave symmetric inductor structure for semiconductor devices
US9508480B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9508480-B2 |
| Application number | US-201113222665-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 31, 2011 |
| Priority date | Aug 31, 2011 |
| Publication date | Nov 29, 2016 |
| Grant date | Nov 29, 2016 |
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- Title
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Abstract
Official abstract text for this publication.
A vertical inductor structure in a semiconductor device includes a plurality of vertically oriented spirals that produce magnetic field in a dielectric material above the surface of a semiconductor substrate thereby preventing any eddy currents from propagating in the substrate. An inductor shield structure is also provided. The inductor shield structure is formed over the substrate surface and between an inductor such as the vertical inductor structure or other inductor types and also prevents eddy currents from being induced in the substrate. The inductor shield may surround the inductor to various degrees.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor device comprising an inductor structure formed on a semiconductor substrate with a planar substrate surface, said inductor structure comprising at least two flat spiral conductive structures, each of said flat spiral conductive structures formed of at least three horizontal strips of conductive material vertically separated, each of said horizontal strips having a respective horizontal area, wherein a projected horizontal area of each of said…
Assignees
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Classifications
Electricity · mapped topic
- H01F17/0013Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9508480B2 cover?
- A vertical inductor structure in a semiconductor device includes a plurality of vertically oriented spirals that produce magnetic field in a dielectric material above the surface of a semiconductor substrate thereby preventing any eddy currents from propagating in the substrate. An inductor shield structure is also provided. The inductor shield structure is formed over the substrate surface and…
- Who is the assignee on this patent?
- Cho Hsiu-Ying, Taiwan Semiconductor Mfg Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H01F17/0013. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Nov 29 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).