Program and read trim setting

US9508440B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9508440-B2
Application numberUS-201514688149-A
CountryUS
Kind codeB2
Filing dateApr 16, 2015
Priority dateSep 1, 2005
Publication dateNov 29, 2016
Grant dateNov 29, 2016

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

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A method and apparatus for setting trim parameters in a memory device provides multiple trim settings that are assigned to portions of the memory device according to observed or tested programming speed and reliability.

First claim

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What is claimed is: 1. A method of increasing program reliability in a NAND memory, comprising: identifying a plurality of portions of the NAND memory; testing a plurality of trim settings stored in a trim setting register to determine which trim setting of the plurality of trim settings is best for a respective portion of the plurality of portions of the NAND memory; and assigning the determined best trim setting to the respective portion of the plurality of portions of the N…

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What does patent US9508440B2 cover?
A method and apparatus for setting trim parameters in a memory device provides multiple trim settings that are assigned to portions of the memory device according to observed or tested programming speed and reliability.
Who is the assignee on this patent?
Micron Technology Inc
What technology area does this patent fall under?
Primary CPC classification G11C16/10. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Nov 29 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).