Program verify word line ramping delay for lower current consumption mode
US-2024395343-A1 · Nov 28, 2024 · US
US9508440B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9508440-B2 |
| Application number | US-201514688149-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 16, 2015 |
| Priority date | Sep 1, 2005 |
| Publication date | Nov 29, 2016 |
| Grant date | Nov 29, 2016 |
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A method and apparatus for setting trim parameters in a memory device provides multiple trim settings that are assigned to portions of the memory device according to observed or tested programming speed and reliability.
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What is claimed is: 1. A method of increasing program reliability in a NAND memory, comprising: identifying a plurality of portions of the NAND memory; testing a plurality of trim settings stored in a trim setting register to determine which trim setting of the plurality of trim settings is best for a respective portion of the plurality of portions of the NAND memory; and assigning the determined best trim setting to the respective portion of the plurality of portions of the N…
Physics · mapped topic
Physics · mapped topic
Physics · mapped topic
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