Non-volatile multi-level-cell memory with decoupled bits for higher performance and energy efficiency
US-2015364191-A1 · Dec 17, 2015 · US
Nanoscale metal oxide resistive switching element
US9508425B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9508425-B2 |
| Application number | US-201113167920-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 24, 2011 |
| Priority date | Jun 24, 2010 |
| Publication date | Nov 29, 2016 |
| Grant date | Nov 29, 2016 |
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Abstract
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A non-volatile memory device structure. The non-volatile memory device structure comprises a first electrode formed from a first metal material, a resistive switching element overlying the first electrode. The resistive switching element comprises a metal oxide material characterized by one or more oxygen deficient sites. The device includes a second electrode overlying the resistive switching layer, the second electrode being formed from a second metal material. The second electrode is made from a noble metal. The one or more oxygen deficient sites are caused to migrate from one of the first electrode or the second electrode towards the other electrode upon a voltage applied to the first electrode or the second electrode. The device can have a continuous change in resistance upon applying a continuous voltage ramp, suitable for an analog device. Alternatively, the device can have a sharp change in resistance upon applying the continuous voltage ramp, suitable for a digital device.
First claim
Opening claim text (preview).
What is claimed is: 1. A switching device, comprising: a first electrode, the first electrode including a first metal material; a resistive switching element overlying the first electrode, the resistive switching element comprising a metal oxide material characterized by a plurality of oxygen deficient sites; and a second electrode overlying the resistive switching element, the second electrode including a second metal material, wherein the first metal material and the second…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9508425B2 cover?
- A non-volatile memory device structure. The non-volatile memory device structure comprises a first electrode formed from a first metal material, a resistive switching element overlying the first electrode. The resistive switching element comprises a metal oxide material characterized by one or more oxygen deficient sites. The device includes a second electrode overlying the resistive switching …
- Who is the assignee on this patent?
- Lu Wei, Jo Sung Hyun, Univ Michigan Regents
- What technology area does this patent fall under?
- Primary CPC classification G11C11/5685. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Nov 29 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).