Semiconductor storage device

Patent metadata

Field	Value
Publication number	US-9508413-B2
Application number	US-201514958325-A
Country	US
Kind code	B2
Filing date	Dec 3, 2015
Priority date	Sep 6, 2013
Publication date	Nov 29, 2016
Grant date	Nov 29, 2016

Abstract

A semiconductor storage device includes a first bit line and a second bit line. A nonvolatile memory element and a first cell transistor are connected in series between the first bit line and the second bit line. A sense transistor has a gate connected to a sense node which is provided between the first bit line and the memory element. A read bit line is connected to a source or a drain of the sense transistor. The read bit line is configured to transmit data of the memory element. A sense amplifier is configured to detect the logic of data transmitted from the read bit line.

First claim

The invention claimed is:

1. A semiconductor storage device comprising:
an MTJ element and a first cell transistor connected in series between a first bit line and a second bit line;
a sense transistor having a gate connected to a sense node which is provided between the first cell transistor and the MTJ element; and
a read bit line connected to a source or a drain of the sense transistor, the read bit line being configured to transmit a logic of data of the MTJ element,
wherein:
the sense node is formed using a first metal layer on a contact plug provided on a gate electrode of the sense transistor, and is connected to the gate electrode via the contact plug,
the MTJ element is provided on the sense node, and
the first bit line, the second bit line, and the read bit line are formed using a second metal layer provided on the MTJ element.

2. The device of claim 1 , further comprising a word line formed using a third metal layer provided above the first bit line and the second bit line.

3. The device of claim 2 , wherein:
the first bit line, the second bit line, and the read bit line extend in a perpendicular direction to an extending direction of the word line, and
a plurality of pairs of the first bit line and the second bit line adjacent to each other in the extending direction of the word line share the read bit line.

4. The device of claim 3 , wherein when the first bit line, the second bit line, and the read bit line are denoted as BL 1 , BL 2 , and RBL, respectively, BL 1 , BL 2 , and RBL are arranged in an order of BL 1 , BL 2 , RBL, BL 2 , and BL 1 .

5. The device of claim 2 , wherein:
the MTJ element, the first cell transistor, and the sense transistor form one memory cell, and
two memory cells adjacent to each other in an extending direction of the word line share the read bit line.

6. The device of claim 5 , wherein the sense transistor is arranged nearer the read bit line as compared with the first cell transistor in the memory cell.

Assignees

• Toshiba Kk

Inventors

• Katayama Akira
• Takahashi Masahiro

Classifications

• G11C11/16

  using elements in which the storage effect is based on magnetic spin effect · CPC title

• G11C5/06

  Arrangements for interconnecting storage elements electrically, e.g. by wiring · CPC title

• G11C13/0026

  Bit-line or column circuits · CPC title

• G11C11/1673 Primary

  Reading or sensing circuits or methods · CPC title

• G11C2013/0073

  Write using bi-directional cell biasing · CPC title