Resin and photoresist composition comprising the same

Patent metadata

Field	Value
Publication number	US-9507258-B2
Application number	US-201113290558-A
Country	US
Kind code	B2
Filing date	Nov 7, 2011
Priority date	Nov 9, 2010
Publication date	Nov 29, 2016
Grant date	Nov 29, 2016

Abstract

The present invention provides a resin comprising a structural unit represented by the formula (aa):

wherein T 1 represents a C4-C34 sultone ring group optionally having one or more substituents, X 1 represents —O— or —N(R c )—, R c represents a hydrogen atom or a C1-C6 alkyl group, Z 1 represents *-X 2 —, *-X 2 —X 4 —CO—X 3 —, or *-X 2 —CO—X 4 —X 3 —, X 2 and X 3 independently each represent a C1-C6 alkanediyl group, X 4 represents —O— or —N(R c )—, * represents a binding position to X 1 , and R 1 represents a C1-C6 alkyl group optionally having one or more halogen atoms, a hydrogen atom or a halogen atom.

First claim

What is claimed is:

1. A resin comprising a structural unit represented by the formula (aa):

wherein T 1 represents a group represented by the formula (T1):

wherein X 11 , X 12 and X 13 independently each represent —O—, —S— or —CH 2 —, one or two hydrogen atoms in —CH 2 — in the formula (T1) may be replaced by a halogen atom, a hydroxyl group, a cyano group, C1-C12 alkyl group optionally having a halogen atom or a hydroxyl group, a C1-C12 alkoxy group, C6-C12 aryl group, a C7-C12 aralkyl group, a glycidyloxy group, a C2-C12 alkoxycarbonyl group or a C2-C4 acyl group, and * represents a binding position to —O—, in the formula (aa), X 1 represents —O— or —N(R c )—, R c represents a hydrogen atom or a C1-C6 alkyl group, Z 1 represents a C1-C6 alkanediyl group and R 1 represents a C1-C6 alkyl group optionally having one or more halogen atoms, a hydrogen atom or a halogen atom.

2. The resin according to claim 1 , wherein the resin is one being insoluble or poorly soluble in an aqueous alkali solution but becoming soluble in an aqueous alkali solution by the action of an acid.

3. A photoresist composition comprising the resin according to claim 2 and an acid generator.

4. The photoresist composition according to claim 3 , which further comprises a solvent.

5. The photoresist composition according to claim 3 , which further comprises a basic compound.

6. The photoresist composition according to claim 4 , which further comprises a basic compound.

7. A process for producing a photoresist pattern comprising:
(1) a step of applying the photoresist composition according to claim 3 , claim 4 , claim 5 or claim 6 on a substrate to form a photoresist composition layer,
(2) a step of fainting a photoresist film by drying the photoresist composition layer formed,
(3) a step of exposing the photoresist film to radiation,
(4) a step of heating the photoresist film after exposing, and
(5) a step of developing the photoresist film after heating.

Assignees

• Ichikawa Koji
• Shimada Masahiko
• Nishimura Takashi
• Sumitomo Chemical Co

Inventors

• Ichikawa Koji
• Shimada Masahiko
• Nishimura Takashi

Classifications

• G03F7/0392

  the macromolecular compound being present in a chemically amplified positive photoresist composition · CPC title

• G03F7/0045

  with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors · CPC title

• C08F220/28

  containing no aromatic rings in the alcohol moiety · CPC title

• G03F7/004 Primary

  Photosensitive materials (G03F7/12, G03F7/14 take precedence) · CPC title

• C08F220/38 Primary

  Esters containing sulfur · CPC title