Optical proximity correction for improved electrical characteristics

Patent metadata

Field	Value
Publication number	US-9507250-B2
Application number	US-64016609-A
Country	US
Kind code	B2
Filing date	Dec 17, 2009
Priority date	Dec 17, 2009
Publication date	Nov 29, 2016
Grant date	Nov 29, 2016

Abstract

A method, computer program product, and data processing system for performing an improved optical proximity correction are disclosed, which better respect the electrical properties of the device being manufactured. A preferred embodiment of the present invention performs OPC by first dividing the perimeter of a mask region into a plurality of segments, then grouping the segments into at least two distinct groups, wherein segments in the first of these groups are adjusted in position so as to minimize edge placement error (EPE) when the photolithography using the mask is simulated. Segments in the second group are adjusted in position so as to minimize cumulative error in a dimension spanning the region, wherein the span of such dimension extends from segments in the first group to segments in the second group. Correction so obtained by this process more readily preserves the intended electrical behavior of the original device design.

First claim

What is claimed is:

1. A computer-implemented method of correcting a design of a photomask to account for diffraction, the method comprising:
dividing, in an application executing using a processor and a memory, a perimeter of a region within the photomask into a plurality of segments;
grouping the plurality of segments into a first group and a second group;
adjusting positions of segments from the first group such that an edge placement error is minimized; and
adjusting pos…

Assignees

• Agarwal Kanak B
• Nassif Sani R
• IBM

Inventors

• Agarwal Kanak B
• Nassif Sani R

Classifications

• G03F1/36 Primary

  Physics · mapped topic

• G03F1/144 Primary

  Physics · mapped topic