Coulomb counter circuitry
US-12101097-B2 · Sep 24, 2024 · US
US9507005B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9507005-B2 |
| Application number | US-201414197702-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 5, 2014 |
| Priority date | Mar 5, 2014 |
| Publication date | Nov 29, 2016 |
| Grant date | Nov 29, 2016 |
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An example of a device comprises a signal generator to generate a signal causing a magnetic self test field for a magneto-resistive sensing element. A signal input is configures to receive a first sensor signal at a first time instant before the magnetic self test field is applied and a second sensor signal at a second time instant after the magnetic self test field is applied. An evaluation circuit is configured to determine information indicating a safe operation based on an evaluation of the first sensor signal and the second sensor signal.
Opening claim text (preview).
What is claimed is: 1. A device, comprising: a signal generator to generate a signal causing a magnetic self test field for a magneto-resistive sensing element; a signal input to receive a first sensor signal of the magneto-resistive sensing element at a first time instant before the magnetic self test field is applied and a second sensor signal of the magneto-resistive sensing element at a second time instant after the magnetic self test field is applied; and an evaluation circuit to determine information indicating a safe operation based on an evaluation of the first sensor signal and the second sensor signal, wherein the evaluation is configured to determine that the magneto-resistive sensing element is in a safe operation state if a difference between the first sensor signal and the second sensor signal corresponds to an expected response of the magneto-resistive sensing element to the magnetic self test field. 2. The device of claim 1 , wherein the signal is configured to cause a current through a compensation coil of the magneto-resistive sensing element. 3. The device of claim 1 , wherein the signal is configured to cause a current through a flipping coil of an anisotropic magneto-resistive sensing element. 4. The device of claim 3 , wherein the signal is configured to cause a current through the flipping coil which is smaller than a further current used to flip a direction of a magnetization of the anisotropic magneto-resistive sensing element. 5. The device of claim 3 , wherein the signal is configured to cause a flipping current through the flipping coil which generates a magnetic flipping field causing a flipping of a direction of a magnetization of the anisotropic magneto-resistive sensing element. 6. The device of claim 1 , wherein the signal generator is further configured to cause a further magnetic self test field after the second time instant. 7. A current sensor comprising: at least one magneto-resistive sensing element to provide a sensor signal in response to a magnetic field; a signal generator to cause a magnetic self test field at the magneto-resistive sensing element; a readout circuit to receive a first sensor signal of the magneto-resistive sensing element at a first time instant before the magnetic self test field is applied and a second sensor signal of the magneto-resistive sensing element at a second time instant after the magnetic self test field is applied; and an evaluation circuit to determine information indicating a safe operation of the current sensor based on an evaluation of the first sensor signal and the second sensor signal; wherein the evaluation circuit is configured to determine that the magneto-resistive sensing element is in a safe operation state if a difference between the first sensor signal and the second sensor signal corresponds to an expected response of the magneto-resistive sensing element to the magnetic self test field. 8. The current sensor of claim 7 , further comprising: at least one compensation coil to compensate an external magnetic field at the magneto-resistive sensing element at least partly if a current flows through the compensation coil, wherein the signal generator is configured to cause a current through the compensation coil. 9. The current sensor of claim 7 , comprising four magneto-resistive sensing elements, the magneto-resistive sensing elements being coupled as a Wheatstone bridge. 10. The current sensor of claim 7 , wherein the magneto-resistive sensing element is an anisotropic magneto-resistive sensing element. 11. The current sensor of claim 10 , further comprising: at least one flipping coil to flip a direction of a magnetization of the anisotropic magneto-resistive sensing element. 12. The current sensor of claim 11 , wherein the signal generator is configured to cause a flipping current through the flipping coil, the flipping current generating a magnetic flipping field used to flip the magnetization of the anisotropic magneto-resistive sensing element. 13. The current sensor of claim 12 wherein the signal generator generates a current through the flipping coil which is smaller than the flipping current. 14. The current sensor of claim 12 , wherein the evaluation circuit is configured to determine that the magneto-resistive sensing element is in a safe operation state if a difference between the first sensor signal and the second sensor signal corresponds to an expected offset of the magneto-resistive sensing element.
Calibrating; Standards or reference devices, e.g. voltage or resistance standards, "golden" references (G01R33/0035, G01R35/002 take precedence) · CPC title
Constructional adaptation of the sensor to specific applications · CPC title
Measuring current only · CPC title
Testing or calibrating of apparatus covered by the other groups of this subclass · CPC title
using magneto-resistance devices, e.g. field plates · CPC title
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