Substrate treating apparatus and method

Patent metadata

Field	Value
Publication number	US-9506695-B2
Application number	US-201414556334-A
Country	US
Kind code	B2
Filing date	Dec 1, 2014
Priority date	Nov 29, 2013
Publication date	Nov 29, 2016
Grant date	Nov 29, 2016

Abstract

Provided is a substrate treating apparatus. The substrate treating apparatus includes a first unit, a second unit, a supply line connecting the first unit to the second unit to supply a supercritical fluid from the first unit to the second unit, a flow rate adjustment member disposed in the supply line, and a filter disposed in the supply line to remove foreign substances. The supply line disposed between the flow rate adjustment member and the filter is disposed to get out of a straight line.

First claim

What is claimed is:

1. A substrate treating apparatus comprising:
a first unit;
a second unit;
a supply line connecting the first unit to the second unit to supply a supercritical fluid from the first unit to the second unit;
a flow rate adjustment member disposed in the supply line; and
a filter disposed in the supply line to remove foreign substances,
wherein the supply line disposed between the flow rate adjustment member and the filter is disposed to get out of a straight line,
wherein the flow rate adjustment member comprises an orifice, and
wherein the supply line disposed between the orifice and the filter has a length greater than a length of the supply line disposed between the filter and the second unit.

2. The substrate treating apparatus of claim 1 , wherein the supply line disposed between the orifice and the filter is disposed in a zigzag shape.

3. The substrate treating apparatus of claim 1 , wherein the supply line disposed between the orifice and the filter has a length ranging from about 1 meter to about 5 meters.

4. The substrate treating apparatus of claim 3 , wherein the supply line disposed between the orifice and the filter has a diameter greater than that of the supply line disposed between the first unit and the orifice.

5. The substrate treating apparatus of claim 4 , wherein the orifice comprises a first orifice and a second orifice which are disposed in parallel to each other, and
the first orifice has a diameter different from that of the second orifice.

6. The substrate treating apparatus of claim 5 , wherein the first orifice has a diameter less than that of the second orifice.

7. The substrate treating apparatus of claim 2 , further comprising a heating member for heating the supply line disposed between the orifice and the filter.

8. The substrate treating apparatus of claim 7 , wherein the heating member comprises a heater that is disposed to surround the supply line disposed between the orifice and the filter.

9. The substrate treating apparatus of claim 8 , wherein the first unit comprises a supply tank for storing the supercritical fluid, and
the second unit comprises a process chamber in which a process is performed by using the supercritical fluid.

10. A substrate treating method for treating a substrate by using a supercritical fluid, the substrate treating method comprising:
supplying the supercritical fluid from a first unit to a second unit via a supply line;
adjusting a flow rate of the supercritical fluid in the supply line by a flow rate adjustment member; and
removing foreign substances contained in the supercritical fluid by a filter,
wherein the supply line disposed between the flow rate adjustment member and the filter is disposed to get out of a straight line,
wherein the flow rate adjustment member comprises an orifice, and
wherein the supply line disposed between the orifice and the filter has a length greater than a length of the supply line disposed between the filter and the second unit.

11. The substrate treating method of claim 10 , wherein the supply line disposed between the orifice and the filter is disposed in a zigzag shape.

12. The substrate treating method of claim 11 , wherein the supply line disposed between the orifice and the filter has a length ranging from about 1 meter to about 5 meters.

13. The substrate treating method of claim 12 , wherein the supply line disposed between the orifice and the filter has a diameter greater than that of the supply line disposed between the first unit and the orifice.

14. The substrate treating method of claim 12 , further comprising heating the supply line disposed between the orifice and the filter.

15. The substrate treating apparatus of claim 8 , wherein the heater is an in-line heater.

16. The substrate treating apparatus of claim 8 , wherein the heater is a regulator.

17. The substrate treating apparatus of claim 7 , wherein the heating member is a housing which surrounds the supply line disposed between the orifice and the filter.

18. The substrate treating apparatus of claim 1 , wherein the flow rate adjustment member includes a metering valve.

19. The substrate treating apparatus of claim 18 , wherein the supply line is disposed between the metering valve and the filter.

20. The substrate treating apparatus of claim 1 , wherein the supply line is a circulation line between the first unit and the second unit.

Assignees

• Semes Co Ltd

Inventors

• Kim Ki-Bong
• Kim Seong-Soo
• Kim Woo-Young

Classifications

• H10P72/0414

  using mainly spraying means, e.g. nozzles · CPC title

• H10P72/0408

  for drying · CPC title

• H10P72/0402

  Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence) · CPC title

• F26B21/003 Primary

  Air or gas filters · CPC title

• H10P50/00 Primary

  Etching of wafers, substrates or parts of devices · CPC title