Blank of TiO2-SiO2 glass for a mirror substrate for use in EUV lithography and method for the production thereof
US-9522840-B2 · Dec 20, 2016 · US
US9505649B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9505649-B2 |
| Application number | US-201414474427-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 2, 2014 |
| Priority date | Sep 13, 2013 |
| Publication date | Nov 29, 2016 |
| Grant date | Nov 29, 2016 |
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Silica-titania glasses with small temperature variations in coefficient of thermal expansion over a wide range of zero-crossover temperatures and methods for making the glasses. The method includes a cooling protocol with controlled anneals over two different temperature regimes. A higher temperature controlled anneal may occur over a temperature interval from 750° C.-950° C. or a sub-interval thereof. A lower temperature controlled anneal may occur over a temperature interval from 650° C.-875° C. or a sub-interval thereof. The controlled anneals permit independent control over CTE slope and Tzc of silica-titania glasses. The independent control provides CTE slope and Tzc values for silica-titania glasses of fixed composition over ranges heretofore possible only through variations in composition.
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What is claimed is: 1. A method of annealing glass comprising: providing a silica-titania glass article, said silica-titania glass article having a first fictive temperature and a first Tzc; heating said glass article to a first temperature, said first temperature being in the range from 60° C. below said first fictive temperature to 10° C. below said first fictive temperature, said heating excluding exposing said glass article to a temperature greater than said first fictive temperature; cooling said glass article at a first rate from said first temperature to a second temperature, said second temperature being at least 25° C. less than said first temperature; cooling said glass article at a second rate to a third temperature, said third temperature being at least 50° C. less than said second temperature, said second rate exceeding said first rate, said cooling producing a finished silica-titania glass article, said finished silica-titania glass article having a second fictive temperature and a second Tzc, said second fictive temperature differing from said first fictive temperature by less than 10° C., said second Tzc differing from said first Tzc by at least 0.5° C. 2. The method of claim 1 , wherein said first temperature is in the range from 40° C. below said first fictive temperature to 20° C. below said first fictive temperature. 3. The method of claim 1 , wherein said second temperature is at least 50° C. less than said first temperature. 4. The method of claim 1 , wherein said first cooling rate is in the range from 0.5° C./hour to 100° C./hour. 5. The method of claim 1 , wherein said second fictive temperature differs from said first fictive temperature by less than 5° C. and said second Tzc differs from said first Tzc by at least 3° C. 6. The method of claim 1 , wherein said first temperature is in the range from 50° C. below said first fictive temperature to 20° C. below said first fictive temperature. 7. The method of claim 1 , wherein said second temperature is at least 25° C. less than said first temperature. 8. The method of claim 1 , wherein said second temperature is at least 100° C. less than said first temperature. 9. The method of claim 1 , wherein said first cooling rate is in the range from 1.0° C./hour to 50° C./hour. 10. The method of claim 1 , wherein said first cooling rate is in the range from 2.0° C./hour to 25° C./hour. 11. The method of claim 1 , wherein said second fictive temperature differs from said first fictive temperature by less than 2° C. and said second Tzc differs from said first Tzc by at least 4° C. 12. The method of claim 1 , wherein said second fictive temperature differs from said first fictive temperature by less than 2° C. and said second Tzc differs from said first Tzc by at least 6° C. 13. The method of claim 1 , wherein said second fictive temperature differs from said first fictive temperature by less than 1° C. and said second Tzc differs from said first Tzc by at least 8° C.
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