Glass-ceramics substrates for graphene growth
US-2015110998-A1 · Apr 23, 2015 · US
Metal-free CVD coating of graphene on glass and other dielectric substrates
US9505624B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9505624-B2 |
| Application number | US-201414182819-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 18, 2014 |
| Priority date | Feb 18, 2014 |
| Publication date | Nov 29, 2016 |
| Grant date | Nov 29, 2016 |
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Abstract
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A catalyst-free CVD method for forming graphene. The method involves placing a substrate within a reaction chamber, heating the substrate to a temperature between 600° C. and 1100° C., and introducing a carbon precursor into the chamber to form a graphene layer on a surface of the substrate. The method does not use plasma or a metal catalyst to form the graphene.
First claim
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We claim: 1. A method for forming graphene, comprising: placing a substrate within a reaction chamber; heating the substrate to a temperature between 600° C. and 1100° C.; introducing a carbon precursor into the chamber and forming a graphene layer on a surface of the substrate, wherein the substrate is free of a metal catalyst and the chamber is free of plasma during the forming, wherein the substrate comprises glass or glass-ceramic. 2. The method according to claim 1 , wherein the substrate is a honeycomb substrate. 3. The method according to claim 1 , wherein the substrate is heated to a temperature between 700° C. and 1000° C. 4. The method according to claim 1 , wherein the carbon precursor is selected from the group consisting of acetylene, ethylene and methane. 5. The method according to claim 1 , wherein the chamber pressure is from 0.001 to 760 Torr. 6. The method according to claim 1 , wherein the graphene layer thickness is from 0.34 to 100 nm. 7. The method according to claim 1 , wherein the reaction chamber is free of hydrogen gas during the forming. 8. The method according to claim 1 , further comprising heating the graphene layer in vacuum without exposure to the carbon precursor. 9. The method according to claim 8 , wherein a metal catalyst is placed proximate to the graphene layer. 10. A method for forming graphene, comprising: placing a honeycomb substrate within a reaction chamber; heating the honeycomb substrate to a temperature between 600° C. and 1100° C.; introducing a carbon precursor into the chamber and forming a graphene layer on a surface of the honeycomb substrate, wherein the honeycomb substrate is free of a metal catalyst and the chamber is free of plasma during the forming.
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Classifications
Chemistry & Metallurgy · mapped topic
1 mil or less · CPC title
Self-sustaining carbon mass or layer with impregnant or other layer · CPC title
- C01B31/0453Primary
Chemistry & Metallurgy · mapped topic
No layer or component greater than 5 mils thick · CPC title
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- What does patent US9505624B2 cover?
- A catalyst-free CVD method for forming graphene. The method involves placing a substrate within a reaction chamber, heating the substrate to a temperature between 600° C. and 1100° C., and introducing a carbon precursor into the chamber to form a graphene layer on a surface of the substrate. The method does not use plasma or a metal catalyst to form the graphene.
- Who is the assignee on this patent?
- Corning Inc
- What technology area does this patent fall under?
- Primary CPC classification C01B31/0453. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Nov 29 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).