Holding device, method of determining attraction abnormality in holding device, lithography apparatus, and method of manufacturing article
US-2024393682-A1 · Nov 28, 2024 · US
US9505166B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9505166-B2 |
| Application number | US-201314068983-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 31, 2013 |
| Priority date | Nov 1, 2012 |
| Publication date | Nov 29, 2016 |
| Grant date | Nov 29, 2016 |
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A rectangular substrate is used as a mold after it is provided with a topological pattern. The substrate has A-side and B-side opposed surfaces, the A-side surface being provided with the topological pattern. The A-side surface includes a central rectangular region of 1 to 50 mm by 1 to 50 mm having a flatness of up to 350 nm. Use of the mold-forming substrate prevents the occurrence of a pattern misalignment or pattern error between the step of forming a pattern on a mold-forming substrate and the transfer step. Transfer of a fine size and complex pattern is possible.
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The invention claimed is: 1. A rectangular substrate which is to be provided with a topological pattern for use as a mold, the substrate having A-side and B-side opposed surfaces, the A-side surface is to be provided with the topological pattern, wherein the A-side surface includes a central rectangular region which is sized 1 to 50 mm by 1 to 50 mm and to be provided with the topological pattern, the central rectangular region having a flatness of up to 350 nm, the distance t 1 ′ between the central rectangular region of the A-side surface and the B-side surface is greater than the distance t 1 between a peripheral region of the A-side surface excluding the central rectangular region and the B-side surface (t 1 ′>t 1 ), an average plane for the central rectangular region of the A-side surface is substantially parallel to an average plane for the B-side surface excluding a central rectangular region of 50 to 100 mm by 50 to 100 mm, and an angle between normal vectors to the two average planes is equal to or less than 5 seconds. 2. The substrate of claim 1 wherein the B-side surface includes an inner rectangular region extending inward from an inside position spaced 3 mm apart from the periphery of the B-side surface, the inner rectangular region having a flatness of up to 3 μm. 3. The substrate of claim 1 wherein the B-side surface includes an inner rectangular region extending inward from an inside position spaced 3 mm apart from the periphery of the B-side surface, but excluding a central rectangular region of 50 to 100 mm by 50 to 100 mm in the B-side surface, the inner rectangular region having a flatness of up to 3 μm. 4. The substrate of claim 1 wherein the central rectangular region of the A-side surface has a birefringence of up to 3 nm/cm. 5. A rectangular substrate which is to be provided with a topological pattern for use as a mold, the substrate having A-side and B-side opposed surfaces, the A-side surface is to be provided with the topological pattern, wherein the A-side surface includes a central rectangular region which is sized 1 to 50 mm by 1 to 50 mm and to be provided with the topological pattern, the central rectangular region having a flatness of up to 350 nm, the B-side surface is provided with a recess or channel, the distance t 2 ′ between the central rectangular region of the A-side surface and a region of the B-side surface where the recess or channel is not formed is greater than the distance t 2 between a peripheral region of the A-side surface excluding the central rectangular region and the region of the B-side surface where the recess or channel is not formed (t 2 ′>t 2 ), an average plane for the central rectangular region of the A-side surface is substantially parallel to an average plane for the B-side surface excluding the recess or channel, and an angle between normal vectors to the two average planes is equal to or less than 5 seconds. 6. The substrate of claim 5 wherein the B-side surface includes an inner rectangular region extending inward from an inside position spaced 3 mm apart from the periphery of the B-side surface and excluding the recess or channel, the inner rectangular region having a flatness of up to 3 μm. 7. The substrate of claim 5 wherein the central rectangular region of the A-side surface has a birefringence of up to 3 nm/cm.
of layered or coated substantially flat surfaces · CPC title
for making a smooth surface · CPC title
Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping · CPC title
by wave energy or particle radiation {, e.g. infrared heating (B29C59/007 takes precedence)} · CPC title
characterised by the disposition or the configuration, e.g. dimensions, of the embossments or the shaping tools therefor · CPC title
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