Semiconductor package having an isolation wall to reduce electromagnetic coupling
US-2015170986-A1 · Jun 18, 2015 · US
US9503035B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9503035-B2 |
| Application number | US-201414571929-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 16, 2014 |
| Priority date | Dec 18, 2013 |
| Publication date | Nov 22, 2016 |
| Grant date | Nov 22, 2016 |
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There is provided a high-frequency amplifier including a divider, a plurality of amplifiers for amplifying a high-frequency signal distributed by the divider and outputting the amplified high-frequency signal, a combiner for combining amplified high-frequency signals, a base substrate, a conductor pattern that is connected to a ground end of each of the amplifiers, and a ground electrode. Each of the conductor patterns has a first conductive portion. A slot is disposed between the two conductor patterns connected to the corresponding adjacent amplifiers. Between the adjacent amplifiers, two vias are formed so that the slot is sandwiched between the vias. One of the two conductor patterns is connected to the ground electrode via one of the two vias, and the other one of the conductor patterns is connected to the ground electrode via the other one of the two vias.
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What is claimed is: 1. A high-frequency amplifier comprising: a divider for distributing an input high-frequency signal; a plurality of parallel-connected amplifiers for amplifying a high-frequency signal distributed by the divider and outputting the amplified high-frequency signal; a combiner for combining high-frequency signals amplified by the amplifiers; a substrate on which the amplifiers are disposed; a conductor pattern connected to a ground end of each of the amplifiers; and a ground electrode, wherein the conductor pattern has a first conductive portion extending in a direction in which the amplifiers are adjacent to each other, wherein a slot is disposed between two conductor patterns connected to corresponding adjacent ones of the amplifiers, wherein, between the adjacent amplifiers, two vias passing through the substrate are formed so that the slot is sandwiched between the vias, wherein one of the two conductor patterns connected to the corresponding adjacent amplifiers is connected to the ground electrode via one of the two vias, and the other one of the two conductor patterns connected to the corresponding adjacent amplifiers is connected to the ground electrode via the other one of the two vias, and wherein a length of the slot is substantially equal to or less than a half-wavelength of a high-frequency signal used. 2. The high-frequency amplifier according to claim 1 , wherein the conductor pattern has, between the adjacent amplifiers, a second conductive portion extending in a direction different from the direction in which the first conductive portion extends, wherein the second conductive portions of the two conductor patterns connected to the corresponding adjacent amplifiers extend in directions away from each other, and wherein the second conductive portion is connected to one of the two vias. 3. The high-frequency amplifier according to claim 1 , further comprising in parallel with the slot a resistance element connected between the two conductor patterns connected to the corresponding adjacent amplifiers, and wherein the adjacent amplifiers are connected to each other via the conductor patterns and the resistance element. 4. A high-frequency amplifier comprising: a divider for distributing an input high-frequency signal; a plurality of parallel-connected amplifiers for amplifying a high-frequency signal distributed by the divider and outputting the amplified high-frequency signal; a combiner for combining high-frequency signals amplified by the amplifiers; a substrate on which the amplifiers are disposed; a conductor pattern connected to a ground end of each of the amplifiers; in parallel with a slot, resonance circuit connected between the two conductor patterns connected to the corresponding adjacent amplifiers; and a ground electrode, wherein the conductor pattern has a first conductive portion extending in a direction in which the amplifiers are adjacent to each other, wherein the slot is disposed between two conductor patterns connected to corresponding adjacent ones of the amplifiers, wherein, between the adjacent amplifiers, two vias passing through the substrate are formed so that the slot is sandwiched between the vias, wherein one of the two conductor patterns connected to the corresponding adjacent amplifiers is connected to the ground electrode via one of the two vias, and the other one of the two conductor patterns connected to the corresponding adjacent amplifiers is connected to the ground electrode via the other one of the two vias, wherein the adjacent amplifiers are connected to each other via the conductor patterns and the resonance circuit, and wherein the resonance circuit forms a low-pass filter. 5. A high-frequency amplifier comprising: a divider for distributing an input high-frequency signal; a plurality of parallel-connected amplifiers for amplifying a high-frequency signal distributed by the divider and outputting the amplified high-frequency signal; a combiner for combining high-frequency signals amplified by the amplifiers; a substrate on which the amplifiers are disposed; a conductor pattern connected to a ground end of each of the amplifiers; in parallel with a slot, a resonance circuit connected between the two conductor patterns connected to the corresponding adjacent amplifiers; and a ground electrode, wherein the conductor pattern has a first conductive portion extending in a direction in which the amplifiers are adjacent to each other, wherein the slot is disposed between two conductor patterns connected to corresponding adjacent ones of the amplifiers, wherein, between the adjacent amplifiers, two vias passing through the substrate are formed so that the slot is sandwiched between the vias, wherein one of the two conductor patterns connected to the corresponding adjacent amplifiers is connected to the ground electrode via one of the two vias, and the other of the two conductor patterns connected to the corresponding adjacent amplifiers is connected to the ground electrode via the other one of the two vias, wherein the adjacent amplifiers are connected to each other via the conductor patterns and the resonance circuit, wherein the resonance circuit forms a notch filter, and wherein a resonance point of the notch filter is a frequency of a high-frequency signal used. 6. A high-frequency amplifier comprising: a divider for distributing an input high-frequency signal; a plurality of parallel-connected amplifiers for amplifying a high-frequency signal distributed by the divider and outputting the amplified high-frequency signal; a combiner for combining high-frequency signals amplified by the amplifiers; a substrate on which the amplifiers are disposed; a conductor pattern connected to a ground end of each of the amplifiers; and a ground electrode, wherein the conductor pattern has a first conductive portion extending in a direction in which the amplifiers are adjacent to each other, wherein a slot is disposed between two conductor patterns connected to corresponding adjacent ones of the amplifiers, wherein, between the adjacent amplifiers, two vias passing through the substrate are formed so that the slot is sandwiched between the vias, wherein one of the two conductor patterns connected to the corresponding adjacent amplifiers is connected to the ground electrode via one of the two vias, and the other one of the two conductor patterns connected to the corresponding adjacent amplifiers is connected to the ground electrode via the other one of the two vias, and wherein an insulating material with which an inside of the slot is filled has a dielectric constant lower than that of an insulating material used around the slot. 7. The high-frequency amplifier according to claim 4 , wherein the conductor pattern has, between the adjacent amplifiers, a second conductive portion extending in a direction different from the direction in which the first conductive portion extends, wherein the second conductive portions of the two conductor patterns connected to the corresponding adjacent amplifiers extend in directions away from each other, and wherein the second conductive portion is connected to one of the two vias. 8. The high-frequency amplifier according to claim 4 , further comprising in parallel with the slot a resistance element connected between the two conductor patterns connected to the corresponding adjacent amplifiers, and wherein the adjacent amplifiers are connected to each other via the conductor patterns and the resistance element. 9. The high-frequency amplifier according to claim 5 , wherein the conductor pattern has, between the adjacent amplifiers, a second conductive portion extending i
with field-effect devices (H03F3/195 takes precedence) · CPC title
in integrated circuits · CPC title
An input signal being distributed in parallel over the inputs of a plurality of power amplifiers · CPC title
Output signals of a plurality of power amplifiers are parallel combined to a common output · CPC title
with semiconductor devices only · CPC title
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