Power amplifier with termination circuit and resonant circuit

Patent metadata

Field	Value
Publication number	US-9503025-B2
Application number	US-201514671079-A
Country	US
Kind code	B2
Filing date	Mar 27, 2015
Priority date	Jul 11, 2014
Publication date	Nov 22, 2016
Grant date	Nov 22, 2016

Abstract

Aspects of this disclosure relate to efficient power amplifiers, such as class-F power amplifiers. A power amplifier transistor can provide an amplified RF signal. A termination can be coupled to an output of the power amplifier transistor and configured to provide a short circuit at a second harmonic. In some instances, the termination circuit can provide an open circuit at a third harmonic. A resonant circuit can be coupled to the output terminal of the power amplifier transistor and configured to provide an open circuit at the third harmonic. In certain embodiments, an input termination circuit coupled to an input terminal of the power amplifier transistor can provide a short circuit at the second harmonic. The power amplifiers of this disclosure can be implemented, for example, in envelope tracking applications.

First claim

What is claimed is:

1. A power amplifier system comprising:
a power amplifier transistor configured to receive a radio frequency signal at an input terminal and provide an amplified radio frequency signal at an output terminal;
an envelope tracking modulator and a parallel LC circuit coupled between the envelope tracking modulator and the output terminal of the power amplifier transistor, the envelope tracking modulator configured to provide a supply voltage to the power amplifier transistor by way of the parallel LC circuit;
an input termination circuit coupled to the input terminal of the power amplifier transistor, the input termination circuit configured to provide a short circuit at a second harmonic of the radio frequency signal;
a termination circuit coupled to the output terminal of the power amplifier transistor, the termination circuit configured to provide a short circuit at a second harmonic of the amplified radio frequency signal; and
a resonant circuit coupled to the output of the power amplifier transistor, the resonant circuit configured to provide an open circuit at a third harmonic of the amplified radio frequency signal.

2. The power amplifier system of claim 1 wherein the termination circuit is configured to provide an open circuit at the third harmonic of the amplified radio frequency signal.

3. A power amplifier system comprising:
a power amplifier transistor configured to receive a radio frequency signal at an input terminal and provide an amplified radio frequency signal at an output terminal, the power amplifier transistor being implemented on a power amplifier die;
an input termination circuit coupled to the input terminal of the power amplifier transistor, the input termination circuit configured to provide a short circuit at a second harmonic of the radio frequency signal;
a termination circuit coupled to the output terminal of the power amplifier transistor, the termination circuit including a first LC circuit configured to provide a short circuit at a second harmonic of the amplified radio frequency signal and a second LC circuit configured to provide a short circuit at a different even harmonic of the amplified radio frequency signal, the first LC circuit including a first inductive element external to the power amplifier die, and the second LC circuit including a second inductive element external to the power amplifier die; and
a resonant circuit coupled to the output of the power amplifier transistor, the resonant circuit configured to provide an open circuit at a third harmonic of the amplified radio frequency signal.

4. The power amplifier system of claim 1 wherein the parallel LC circuit is configured to block a fundamental frequency of the amplified radio frequency signal.

5. The power amplifier system of claim 1 wherein the power amplifier transistor includes a bipolar transistor having a collector, a base, and an emitter, the input terminal of the power amplifier transistor being the base, and the output terminal of the power amplifier transistor being the collector.

6. The power amplifier system of claim 1 wherein the power amplifier transistor is implemented on a power amplifier die, and the input termination circuit includes an inductive element external to the power amplifier die.

7. The power amplifier system of claim 1 wherein the termination circuit is configured to provide a short circuit at a different even harmonic of the amplified radio frequency signal.

8. The power amplifier system of claim 3 further comprising an envelope tracking modulator and a parallel LC circuit disposed between the envelope tracking modulator and the output terminal of the power amplifier transistor, the envelope tracking modulator configured to provide a supply voltage to the power amplifier transistor by way of the parallel LC circuit.

9. The power amplifier system of claim 3 wherein the resonant circuit is configured to provide an open circuit at another odd harmonic of the amplified radio frequency signal.

10. The power amplifier system of claim 1 wherein the termination circuit includes a capacitor in parallel with a series LC circuit.

11. The apparatus power amplifier system of claim 1 wherein the resonant circuit includes a second parallel LC circuit.

12. A circuit comprising:
a bipolar power amplifier transistor having a collector, a base, and an emitter, the bipolar power amplifier transistor configured to amplify a radio frequency signal received at the base, and the bipolar power amplifier transistor being implemented on a power amplifier die;
a termination circuit coupled to the collector of the bipolar power amplifier transistor, the termination circuit including a series LC circuit and a second series LC circuit in parallel with the series LC circuit, the series LC circuit including an inductive element external to the power amplifier die; and
a parallel LC circuit coupled in series between the collector and a load.

13. The circuit of claim 12 wherein the bipolar power amplifier transistor, the termination circuit, and the parallel LC circuit are arranged as a class F power amplifier.

14. The circuit of claim 12 further comprising a third series LC circuit coupled to the base of the power amplifier transistor.

15. The circuit of claim 12 further comprising an envelope tracking modulator configured to provide a supply voltage for the collector of the bipolar power amplifier transistor.

16. The circuit of claim 15 further comprising a second parallel LC circuit coupled between the envelope tracking modulator and the collector, the envelope tracking modulator configured to provide the supply voltage to the collector by way of the second parallel LC circuit.

17. A power amplifier module comprising:
a power amplifier transistor configured to receive a radio frequency input signal and provide an amplified radio frequency signal;
a termination circuit coupled to an output of the power amplifier transistor, the termination circuit including a capacitor in parallel with a series LC circuit, a capacitance of the capacitor together with an impedance of the series LC circuit at a third harmonic of the amplified radio frequency signal configured to provide an open circuit at the third harmonic of the amplified radio frequency signal, and the termination circuit configured to provide a short circuit at a second harmonic of the amplified radio frequency signal;
a resonant circuit coupled to the output of the power amplifier transistor, the resonant circuit configured to provide an open circuit at the third harmonic of the amplified radio frequency signal; and
a supply voltage circuit including an envelope tracking modulator and a parallel LC circuit disposed between the envelope tracking modulator and the power amplifier transistor, the envelope tracking modulator configured to provide a supply voltage to the power amplifier transistor by way of the parallel LC circuit.

18. The power amplifier module of claim 17 further comprising an input termination circuit configured to provide a short circuit at a second harmonic of the radio frequency input signal, the input termination circuit being coupled to an input of the power amplifier transistor.

19. The power amplifier module of claim 17 wherein the power amplifier transistor includes a heterojunction bipolar transistor.

20. The circuit of claim 12 further comprising an input termination circuit coupled to the base of the bipolar power amplifier transistor, the input termination circuit configured to provide a short circuit a

Assignees

• Skyworks Solutions Inc

Inventors

• Cao Haibo
• Wu Andy Cheng Pang
• Lin Yu-Jui
• King Joel Richard

Classifications

• H03F2200/451

  the amplifier being a radio frequency amplifier · CPC title

• H03F1/0222 Primary

  by using a signal derived from the input signal · CPC title

• H03F1/565

  using inductive elements · CPC title

• H03F3/217 Primary

  Class D power amplifiers; Switching amplifiers · CPC title

• H03F2200/111

  the amplifier being a dual or triple band amplifier, e.g. 900 and 1800 MHz, e.g. switched or not switched, simultaneously or not · CPC title