Electronic device and method for fabricating the same
US-2016181514-A1 · Jun 23, 2016 · US
US9502639B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9502639-B2 |
| Application number | US-201414158702-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 17, 2014 |
| Priority date | Sep 30, 2013 |
| Publication date | Nov 22, 2016 |
| Grant date | Nov 22, 2016 |
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An electronic device includes a semiconductor memory, wherein the semiconductor memory includes: a seed layer including conductive hafnium silicate; a first magnetic layer formed over the seed layer; a tunnel barrier layer formed over the first magnetic layer; and a second magnetic layer formed over the tunnel barrier layer.
Opening claim text (preview).
What is claimed is: 1. An electronic device comprising a semiconductor memory unit that includes: an electrode providing an electrical contact for the semiconductor memory unit; a seed layer including conductive hafnium silicate which includes oxygen, and formed over the electrode; a first magnetic layer formed over the seed layer and the electrode; a tunnel barrier layer formed over the first magnetic layer; and a second magnetic layer formed over the tunnel barrier layer…
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