Electronic device for improving characteristic of variable resistance element and method of fabricating the same

US9502639B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9502639-B2
Application numberUS-201414158702-A
CountryUS
Kind codeB2
Filing dateJan 17, 2014
Priority dateSep 30, 2013
Publication dateNov 22, 2016
Grant dateNov 22, 2016

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

An electronic device includes a semiconductor memory, wherein the semiconductor memory includes: a seed layer including conductive hafnium silicate; a first magnetic layer formed over the seed layer; a tunnel barrier layer formed over the first magnetic layer; and a second magnetic layer formed over the tunnel barrier layer.

First claim

Opening claim text (preview).

What is claimed is: 1. An electronic device comprising a semiconductor memory unit that includes: an electrode providing an electrical contact for the semiconductor memory unit; a seed layer including conductive hafnium silicate which includes oxygen, and formed over the electrode; a first magnetic layer formed over the seed layer and the electrode; a tunnel barrier layer formed over the first magnetic layer; and a second magnetic layer formed over the tunnel barrier layer…

Assignees

Inventors

Classifications

Patent family

Related publications grouped by family.

External sources

Next steps

Free tools are coming soon. Tell us what you want to track and we'll notify you.

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US9502639B2 cover?
An electronic device includes a semiconductor memory, wherein the semiconductor memory includes: a seed layer including conductive hafnium silicate; a first magnetic layer formed over the seed layer; a tunnel barrier layer formed over the first magnetic layer; and a second magnetic layer formed over the tunnel barrier layer.
Who is the assignee on this patent?
Sk Hynix Inc
What technology area does this patent fall under?
Primary CPC classification G11C11/161. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Nov 22 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).