Method of manufacturing flexible piezoelectric structures

Patent metadata

Field	Value
Publication number	US-9502638-B2
Application number	US-201213566738-A
Country	US
Kind code	B2
Filing date	Aug 3, 2012
Priority date	Nov 6, 2009
Publication date	Nov 22, 2016
Grant date	Nov 22, 2016

Abstract

A method of making a flexible piezoelectric structure is disclosed. A piezoelectric film is deposited by film deposition on a planar substrate. A biocompatible flexible substrate is contacted with the piezoelectric film. The piezoelectric film and biocompatible flexible substrate are separated from the planar substrate, and the piezoelectric film remaining is attached to the biocompatible flexible substrate.

First claim

What is claimed is:

1. A method for fabricating a biocompatible flexible piezoelectric structure, comprising:
depositing a first piezoelectric film by film deposition on a planar substrate;
patterning the first piezoelectric film;
contacting a biocompatible flexible substrate with the first piezoelectric film; and
separating the first piezoelectric film and biocompatible flexible substrate from the planar substrate, the first piezoelectric film remaining attached to the biocompatible flexible substrate,
wherein at least a portion of the piezoelectric film is deposited directly on the planar substrate with a patterned layer.

2. The method of claim 1 , wherein the patterning comprises patterning the first piezoelectric film into ribbons having a non-circular cross-section.

3. The method of claim 2 , further comprising fabricating electrode fingers running parallel to the ribbons.

4. The method of claim 2 , further comprising fabricating electrode fingers running perpendicular to the ribbons.

5. The method of claim 1 , wherein depositing comprises at least one of sputtering, radio-frequency sputtering, hydrothermal deposition, chemical vapor deposition (CVD), metal-organic CVD, sol-gel deposition, laser ablation, pulsed laser deposition, or molecular beam epitaxy.

6. The method of claim 1 , wherein the first piezoelectric film comprises an inorganic material.

7. The method of claim 1 , wherein the first piezoelectric film comprises at least one of a non-polymeric material, a non-crystalline material, a partially crystalline material, a polycrystalline material, or a crystalline material.

8. The method of claim 1 , wherein the first piezoelectric film comprises a material having a piezoelectric coefficient exceeding 10 picoCoulombs/Newton.

9. The method of claim 1 , further comprising encapsulating the first piezoelectric film with a second flexible substrate.

10. The method of claim 1 , further comprising fabricating first and second electrodes in contact with the first piezoelectric film.

11. The method of claim 1 , wherein the first and second electrodes are both fabricated in contact with one side of the first piezoelectric film.

12. The method of claim 1 , wherein the first and second electrodes are respectively fabricated in contact with opposite sides of the first piezoelectric film.

13. The method of claim 1 , wherein the flexible substrate comprises at least one of: polydimethylsiloxane (PDMS), polyethylene terephthalate (PET), polyether ether ketone (PEEK), a polyimide, or a polyester.

14. The method of claim 1 , further comprising fabricating at least one additional piezoelectric film stacked over the first piezoelectric film.

Assignees

• Mcalpine Michael C
• Qi Yi
• Univ Princeton

Inventors

• Mcalpine Michael C
• Qi Yi

Classifications

• H10W10/181

  Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers · CPC title

• H10P90/1924

  with separation/delamination along a porous layer · CPC title

• H10P90/1914

  using bonding · CPC title

• A61B5/0408

  Human Necessities · mapped topic

• Y10T29/42

  Piezoelectric device making · CPC title