Light Emitting Diode Epitaxial Structure and Light Emitting Diode
US-2024297271-A1 · Sep 5, 2024 · US
Vertically structured group III nitride semiconductor LED chip and method for manufacturing the same
US9502603B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9502603-B2 |
| Application number | US-201114117281-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 12, 2011 |
| Priority date | May 12, 2011 |
| Publication date | Nov 22, 2016 |
| Grant date | Nov 22, 2016 |
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Abstract
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A method for manufacturing a vertically structured Group III nitride semiconductor LED chip includes a first step of forming a light emitting structure laminate; a second step of forming a plurality of separate light emitting structures by partially removing the light emitting structure laminate to partially expose the growth substrate; a third step of forming a conductive support, which conductive support integrally supporting the light emitting structures; a fourth step of separating the growth substrate by removing the lift-off layer; and a fifth step of dividing the conductive support between the light emitting structures thereby singulating a plurality of LED chips each having the light emitting structure. A first through-hole is formed to open in a central region of each of the light emitting structures such that at least the lift-off layer is exposed, and an etchant is supplied from the first through-hole in the fourth step.
First claim
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The invention claimed is: 1. A method for manufacturing a vertically structured Group III nitride semiconductor LED chip, the method comprising: a first step of forming a light emitting structure laminate by sequentially stacking a first conductivity type Group III nitride semiconductor layer, a light emitting layer, and a second conductivity type Group III nitride semiconductor layer on a growth substrate with a lift-off layer provided therebetween, the second conductivity type G…
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Electricity · mapped topic
Electricity · mapped topic
- H10H20/01335Primary
Electricity · mapped topic
- H10H20/018Primary
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US9502603B2 cover?
- A method for manufacturing a vertically structured Group III nitride semiconductor LED chip includes a first step of forming a light emitting structure laminate; a second step of forming a plurality of separate light emitting structures by partially removing the light emitting structure laminate to partially expose the growth substrate; a third step of forming a conductive support, which conduc…
- Who is the assignee on this patent?
- Cho Meoung Whan, Lee Seog Woo, Jang Pil Guk, and 4 more
- What technology area does this patent fall under?
- Primary CPC classification H10H20/01335. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Nov 22 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).