Thin-film semiconductor optoelectronic device with textured front and/or back surface prepared from template layer and etching

Patent metadata

Field	Value
Publication number	US-9502594-B2
Application number	US-201414452393-A
Country	US
Kind code	B2
Filing date	Aug 5, 2014
Priority date	Jan 19, 2012
Publication date	Nov 22, 2016
Grant date	Nov 22, 2016

Abstract

A method for providing a textured layer in an optoelectronic device is disclosed. The method includes depositing a template layer on a first layer. The template layer has significant inhomogeneity either in thickness or in composition, or both, including the possibility of forming one or more islands to provide at least one textured surface of the island layer. The method also includes exposing the template layer and the first layer to an etching process to create or alter at least one textured surface. The altered at least one textured surface is operative to cause scattering of light.

First claim

What is claimed is:

1. A method for providing a textured layer in an optoelectronic device, the method comprising:
epitaxially growing a template layer of islands on a first planar semiconductor layer wherein the template layer has significant inhomogeneity in thickness;
exposing the template layer and the first planar semiconductor layer to an etching process, to create at least one textured surface in the first planar semiconductor layer using the template layer as an etching…

Assignees

• Alta Devices Inc

Inventors

• Ding I-Kang
• Kayes Brendan M
• Twist Rose
• Spruytte Sylvia
• Liu Feng
• Higashi Gregg
• Archer Melissa J
• He Gang

Classifications

• H01L31/02363 Primary

  Electricity · mapped topic

• H01L31/184

  Electricity · mapped topic

• Y02P70/521

  Cross-Sectional Technologies · mapped topic

• H01L31/18

  Electricity · mapped topic

• Y02E10/50

  Cross-Sectional Technologies · mapped topic