Bottom-gate transistor including an oxide semiconductor layer contacting an oxygen-rich insulating layer

Patent metadata

Field	Value
Publication number	US-9502572-B2
Application number	US-201213721967-A
Country	US
Kind code	B2
Filing date	Dec 20, 2012
Priority date	Dec 27, 2011
Publication date	Nov 22, 2016
Grant date	Nov 22, 2016

Abstract

A highly reliable semiconductor device which includes a transistor including an oxide semiconductor is provided. In a semiconductor device including a bottom-gate transistor including an oxide semiconductor layer, a stacked layer of an insulating layer and a metal film is provided in contact with the oxide semiconductor layer. Oxygen doping treatment is performed in a manner such that oxygen is introduced into the insulating layer and the metal film from a position above the metal film. Thus, a region containing oxygen in excess of the stoichiometric composition is formed in the insulating layer, and the metal film is oxidized to form a metal oxide film. Further, resistivity of the metal oxide film is greater than or equal to 1×10 10 Ωm and less than or equal to 1×10 19 Ωm.

First claim

What is claimed is:

1. A semiconductor device comprising:
a gate electrode layer;
a gate insulating layer over the gate electrode layer;
an oxide semiconductor layer over the gate insulating layer, the oxide semiconductor layer overlapping with the gate electrode layer;
a source electrode layer over the oxide semiconductor layer, the source electrode layer being electrically connected to the oxide semiconductor layer;
a drain electrode layer over the oxide semiconductor layer, the drain electrode layer being electrically connected to the oxide semiconductor layer;
an insulating layer comprising silicon oxide over and in contact with the oxide semiconductor layer; and
an aluminum oxide film over and in contact with the insulating layer,
wherein the aluminum oxide film comprises magnesium or titanium,
wherein the insulating layer comprises a region containing oxygen in excess of a stoichiometric composition,
wherein the aluminum oxide film has a resistivity greater than or equal to 1×10 10 Ωm and less than or equal to 1×10 19 Ωm, and
wherein a thickness of the aluminum oxide film is greater than or equal to 3 nm and less than or equal to 10 nm.

2. The semiconductor device according to claim 1 ,
wherein the insulating layer is over the source electrode layer and the drain electrode layer, and
wherein the insulating layer between the source electrode layer and the drain electrode layer is in contact with the oxide semiconductor layer.

3. The semiconductor device according to claim 1 ,
wherein the source electrode layer is over the insulating layer,
wherein the drain electrode layer is over the insulating layer,
wherein the insulating layer has a first opening and a second opening,
wherein the source electrode layer is in contact with the oxide semiconductor layer through the first opening, and
wherein the drain electrode layer is in contact with the oxide semiconductor layer through the second opening.

4. The semiconductor device according to claim 1 , wherein the insulating layer is a silicon oxide film containing nitrogen.

5. A display device comprising:
a gate electrode layer;
a gate insulating layer over the gate electrode layer;
an oxide semiconductor layer over the gate insulating layer, the oxide semiconductor layer overlapping with the gate electrode layer;
a source electrode layer over the oxide semiconductor layer, the source electrode layer being electrically connected to the oxide semiconductor layer;
a drain electrode layer over the oxide semiconductor layer, the drain electrode layer being electrically connected to the oxide semiconductor layer;
an insulating layer comprising silicon oxide over and in contact with the oxide semiconductor layer;
an aluminum oxide film over and in contact with the insulating layer;
an interlayer insulating layer over the aluminum oxide film; and
a light-emitting element over the interlayer insulating layer,
wherein the aluminum oxide film comprises magnesium or titanium,
wherein the insulating layer comprises a region containing oxygen in excess of a stoichiometric composition,
wherein the aluminum oxide film has a resistivity greater than or equal to 1×10 10 Ωm and less than or equal to 1×10 19 Ωm, and
wherein a thickness of the aluminum oxide film is greater than or equal to 3 nm and less than or equal to 10 nm.

6. The display device according to claim 5 ,
wherein the insulating layer is over the source electrode layer and the drain electrode layer, and
wherein the insulating layer between the source electrode layer and the drain electrode layer is in contact with the oxide semiconductor layer.

7. The display device according to claim 5 ,
wherein the source electrode layer is over the insulating layer,
wherein the drain electrode layer is over the insulating layer,
wherein the insulating layer has a first opening and a second opening,
wherein the source electrode layer is in contact with the oxide semiconductor layer through the first opening, and
wherein the drain electrode layer is in contact with the oxide semiconductor layer through the second opening.

8. The display device according to claim 5 , wherein the insulating layer is a silicon oxide film containing nitrogen.

Assignees

• Semiconductor Energy Lab

Inventors

• Yamazaki Shunpei

Classifications

• H10P14/69391

  the material containing aluminium, e.g. Al2O3 · CPC title

• H10P14/6314

  of a metallic layer · CPC title

• H10P14/203

  using transformation of metal, e.g. oxidation or nitridation · CPC title

• H10D30/6755 Primary

  Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate · CPC title

• H10D30/6704

  having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device · CPC title