Semiconductor device

Patent metadata

Field	Value
Publication number	US-9502548-B1
Application number	US-201514851218-A
Country	US
Kind code	B1
Filing date	Sep 11, 2015
Priority date	Jul 3, 2015
Publication date	Nov 22, 2016
Grant date	Nov 22, 2016

Abstract

A semiconductor device includes a substrate, an active layer, a source electrode, a drain electrode, a gate electrode, a field plate, a first passivation layer, and a metal layer. The active layer is disposed on the substrate. The source electrode and the drain electrode are respectively electrically connected to the active layer. The gate electrode is disposed between the source electrode and the drain electrode and above the active layer. The field plate is disposed above the active layer and between the gate electrode and the drain electrode. The first passivation layer covers the gate electrode and the field plate. The metal layer is disposed on the first passivation layer, is disposed above the gate electrode and the field plate, and is electrically connected to the source electrode.

First claim

What is claimed is:

1. A semiconductor device, comprising:
a substrate;
an active layer disposed on the substrate;
a source electrode and a drain electrode respectively electrically connected to the active layer;
a gate electrode disposed between the source electrode and the drain electrode and above the active layer;
a field plate disposed above the active layer and between the gate electrode and the drain electrode;
a first passivation layer covering the gate electrode and the field plate; and
a metal layer disposed on the first passivation layer, disposed above the gate electrode and the field plate, and electrically connected to the source electrode, wherein a horizontal distance between the metal layer and the source electrode is equal to or longer than a horizontal distance between the gate electrode and the source electrode.

2. The semiconductor device of claim 1 , wherein a first distance is formed between the gate electrode and the active layer, a second distance is formed between the field plate and the active layer, and the second distance is shorter than the first distance.

3. The semiconductor device of claim 1 , wherein a portion of the first passivation layer disposed between the gate electrode and the metal layer has a thickness, and the thickness is less than 500 nanometers.

4. The semiconductor device of claim 1 , wherein a gap is formed between the gate electrode and the field plate, and the metal layer entirely covers the gap.

5. The semiconductor device of claim 1 , wherein a side of the metal layer facing the source electrode is disposed above the gate electrode.

6. The semiconductor device of claim 1 , wherein a side of the metal layer facing the drain electrode is disposed above the field plate.

7. The semiconductor device of claim 2 , wherein the first distance is about 20 nanometers to about 200 nanometers.

8. The semiconductor device of claim 2 , wherein the second distance is about 50 nanometers to about 300 nanometers.

9. The semiconductor device of claim 1 , wherein the field plate is electrically connected to the source electrode.

10. The semiconductor device of claim 1 , wherein the field plate is electrically connected to the gate electrode.

11. The semiconductor device of claim 1 , further comprising:
a second passivation layer disposed between the field plate and the active layer.

12. The semiconductor device of claim 1 , wherein the metal layer entirely covers the gate electrode.

13. The semiconductor device of claim 1 , wherein a horizontal distance between the metal layer and the drain electrode is longer than a horizontal distance between the field plate and the drain electrode.

Assignees

• Delta Electronics Inc

Inventors

• Liao Wen-Chia

Classifications

• H10D62/8503

  Nitride Group III-V materials, e.g. AlN or GaN · CPC title

• H10D62/343

  Gate regions of field-effect devices having PN junction gates · CPC title

• H10D84/813

  Combinations of field-effect devices and capacitor only · CPC title

• H10D30/475

  having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs · CPC title

• H10D1/047

  of conductor-insulator-semiconductor capacitors, e.g. trench capacitors · CPC title