Semiconductor devices having a seal ring
US-2024413245-A1 · Dec 12, 2024 · US
FINFET device having a channel defined in a diamond-like shape semiconductor structure
US9502539B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9502539-B2 |
| Application number | US-201414492920-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 22, 2014 |
| Priority date | Aug 30, 2011 |
| Publication date | Nov 22, 2016 |
| Grant date | Nov 22, 2016 |
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- Title
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Abstract
Official abstract text for this publication.
The present disclosure provides a FinFET device. The FinFET device comprises a semiconductor substrate of a first semiconductor material; a fin structure of the first semiconductor material overlying the semiconductor substrate, wherein the fin structure has a top surface of a first crystal plane orientation; a diamond-like shape structure of a second semiconductor material disposed over the top surface of the fin structure, wherein the diamond-like shape structure has at least one surface of a second crystal plane orientation; a gate structure disposed over the diamond-like shape structure, wherein the gate structure separates a source region and a drain region; and a channel region defined in the diamond-like shape structure between the source and drain regions.
First claim
Opening claim text (preview).
What is claimed is: 1. A method comprising: providing a substrate having a fin structure of a first semiconductor material disposed between an isolation feature; after providing the substrate having the fin structure of the first semiconductor material disposed between the isolation feature, recessing the fin structure to form a trench by removing a portion of the first semiconductor material from the fin structure, wherein the recessed fin structure has a surface having a (100)…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9502539B2 cover?
- The present disclosure provides a FinFET device. The FinFET device comprises a semiconductor substrate of a first semiconductor material; a fin structure of the first semiconductor material overlying the semiconductor substrate, wherein the fin structure has a top surface of a first crystal plane orientation; a diamond-like shape structure of a second semiconductor material disposed over the to…
- Who is the assignee on this patent?
- Taiwan Semiconductor Mfg Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10D62/405. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Nov 22 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).