Semiconductor devices, semiconductor structures and methods for fabricating a semiconductor structure
US-12176346-B2 · Dec 24, 2024 · US
SOI lateral bipolar transistors having surrounding extrinsic base portions
US9502504B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9502504-B2 |
| Application number | US-201314134611-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 19, 2013 |
| Priority date | Dec 19, 2013 |
| Publication date | Nov 22, 2016 |
| Grant date | Nov 22, 2016 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
Lateral SOI bipolar transistor structures are provided including an intrinsic base semiconductor material portion in which all surfaces of the intrinsic base not forming an interface with either a collector semiconductor material portion or an emitter semiconductor material portion, contain an extrinsic base semiconductor material portion. Each extrinsic base semiconductor material portion is of the same conductivity type as that of the intrinsic base semiconductor material portion, yet each extrinsic base semiconductor material portion has a higher dopant concentration than the intrinsic base semiconductor material portion. The intrinsic base semiconductor material portion of the lateral SOI bipolar transistors of the present application does not have any interface with surrounding insulator material layers. As such, any potential charge build-up in the surrounding insulator material layers is shielded by the extrinsic base semiconductor material portions.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor structure comprising: at least one first lateral bipolar transistor located atop a first portion of an insulator layer and comprising: an intrinsic base semiconductor material portion of a first conductivity type and having a bottommost surface, an uppermost surface, and two vertical sidewalls oriented in a width-wise direction; a first horizontal semiconductor material portion of said first conductivity type positioned between said botto…
Assignees
Inventors
Classifications
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10D62/184Primary
Electricity · mapped topic
Patent family
Related publications grouped by family.
External sources
Next steps
Free tools are coming soon. Tell us what you want to track and we'll notify you.
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US9502504B2 cover?
- Lateral SOI bipolar transistor structures are provided including an intrinsic base semiconductor material portion in which all surfaces of the intrinsic base not forming an interface with either a collector semiconductor material portion or an emitter semiconductor material portion, contain an extrinsic base semiconductor material portion. Each extrinsic base semiconductor material portion is o…
- Who is the assignee on this patent?
- IBM
- What technology area does this patent fall under?
- Primary CPC classification H10D62/184. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Nov 22 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).