Method of manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-9502489-B2
Application number	US-201514594063-A
Country	US
Kind code	B2
Filing date	Jan 9, 2015
Priority date	Jan 22, 2014
Publication date	Nov 22, 2016
Grant date	Nov 22, 2016

Abstract

Provided is a semiconductor device having improved reliability. Over a semiconductor substrate, a first coil is formed via a first insulating film. A second insulating film is formed so as to cover the first insulating film and the first coil. Over the second insulating film, a pad is formed. Over the second insulating film, a multi-layer film having an opening exposing a part of the pad is formed. Over the multi-layer insulating film, a second coil is formed. The second coil is placed over the first coil. The second and first coils are magnetically coupled to each other. The multi-layer film includes a silicon dioxide film, a silicon nitride film over the silicon dioxide film, and a resin film over the silicon nitride film.

First claim

What is claimed is:

1. A method of manufacturing a semiconductor device, comprising steps of:
(a) forming a first insulating film over a semiconductor substrate;
(b) forming a first coil over the first insulating film;
(c) forming a second insulating film over the first insulating film such that the second insulating film covers the first coil;
(d) forming a first pad over the second insulating film and at a position not overlapping the first coil in plan view, while forming…

Assignees

• Renesas Electronics Corp

Inventors

• Funaya Takuo
• Igarashi Takayuki

Classifications

• H10W72/5524

  Electricity · mapped topic

• H10W72/5522

  Electricity · mapped topic

• H10W74/00

  Electricity · mapped topic

• H10W72/884

  Electricity · mapped topic

• H10W72/5473

  Electricity · mapped topic