Method for fabricating an array substrate with improved driving ability

Patent metadata

Field	Value
Publication number	US-9502448-B2
Application number	US-201514934864-A
Country	US
Kind code	B2
Filing date	Nov 6, 2015
Priority date	Nov 26, 2012
Publication date	Nov 22, 2016
Grant date	Nov 22, 2016

Abstract

A method for fabricating an array substrate includes sequentially forming a bottom gate, a first gate insulating layer, an active layer and a second gate insulating layer on a base substrate, a gate line being formed at the same time as forming the bottom gate; forming a top gate on the second gate insulating layer; sequentially forming a gate isolation layer, a source electrode, a drain electrode and a pixel electrode on the top gate. Before forming the top gate on the second gate insulating layer, the method includes forming a nickel layer at an area on the active layer where the source electrode is to be formed and/or an area on the active layer where the drain electrode is to be formed, and then performing a heat treatment on the active layer at a temperature in the range of 500° C.-570° C. for 2 hours in an atmosphere of H2.

First claim

The invention claimed is:

1. A method for fabricating an array substrate, including steps:
S1: sequentially forming a bottom gate, a first gate insulating layer, an active layer and a second gate insulating layer on a base substrate, wherein a gate line is formed at the same time as forming the bottom gate;
S2: forming a top gate on the second gate insulating layer;
S3: sequentially forming a gate isolation layer, a source electrode, a drain electrode and a pixel electrode on…

Assignees

• Boe Technology Group Co Ltd

Inventors

• Shi Lei

Classifications

• H10D30/6729

  Electricity · mapped topic

• G02F1/1368

  Physics · mapped topic

• H10D30/6734 Primary

  Electricity · mapped topic

• H10D86/471

  Electricity · mapped topic

• H10D86/60

  Electricity · mapped topic