Systems and methods for fabricating cross-pillar superjunction structures for semiconductor power conversion devices
US-2024038836-A1 · Feb 1, 2024 · US
Semiconductor device
US9502402B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9502402-B2 |
| Application number | US-201314047720-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 7, 2013 |
| Priority date | Mar 23, 2009 |
| Publication date | Nov 22, 2016 |
| Grant date | Nov 22, 2016 |
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Abstract
Official abstract text for this publication.
A semiconductor device includes: a semiconductor layer having a first end portion and a second end portion; a first main electrode provided on the first end portion and electrically connected to the semiconductor layer; a second main electrode provided on the second end portion and electrically connected to the semiconductor layer; a first gate electrode provided via a first gate insulating film in a plurality of first trenches formed from the first end portion toward the second end portion; and a second gate electrode provided via a second gate insulating film in a plurality of second trenches formed from the second end portion toward the first end portion. Spacing between a plurality of the first gate electrodes and spacing between a plurality of the second gate electrodes are 200 nm or less.
First claim
Opening claim text (preview).
The invention claimed is: 1. A semiconductor device comprising: a semiconductor layer including: an N-type base layer; a first P-type base layer on a first side of the N-type base layer; a second P-type base layer on a second side of the N-type base layer, the N-type base layer being between the first and second P-type base layers in a first direction; a plurality of first gate electrodes provided on a first insulating film on the first side of the N-type base layer, the…
Assignees
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Classifications
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10D62/111Primary
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9502402B2 cover?
- A semiconductor device includes: a semiconductor layer having a first end portion and a second end portion; a first main electrode provided on the first end portion and electrically connected to the semiconductor layer; a second main electrode provided on the second end portion and electrically connected to the semiconductor layer; a first gate electrode provided via a first gate insulating fil…
- Who is the assignee on this patent?
- Toshiba Kk
- What technology area does this patent fall under?
- Primary CPC classification H10D62/111. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Nov 22 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).