Semiconductor devices and packages

Patent metadata

Field	Value
Publication number	US-9502369-B2
Application number	US-201514613636-A
Country	US
Kind code	B2
Filing date	Feb 4, 2015
Priority date	Feb 4, 2015
Publication date	Nov 22, 2016
Grant date	Nov 22, 2016

Abstract

Semiconductor device packages include first and second semiconductor dice in a facing relationship. At least one group of solder bumps is substantially along a centerline between the semiconductor dice and operably coupled with integrated circuitry of the first and second semiconductor dice. Another group of solder bumps is laterally offset from the centerline and operably coupled only with integrated circuitry of the first semiconductor die. A further group of solder bumps is laterally offset from the centerline and operably coupled only with integrated circuitry of the second semiconductor die. Methods of forming semiconductor device packages include aligning first and second semiconductor dice with active surfaces facing each other, the first and second semiconductor dice each including bond pads along a centerline thereof and additional bond pads laterally offset from the centerline thereof.

First claim

What is claimed is:

1. A semiconductor device package, comprising:
a first semiconductor die and a second semiconductor die in facing relationship;
at least one group of conductive solder bumps substantially along a centerline between the first and the second semiconductor dice and operably coupled with integrated circuitry of the first semiconductor die and the second semiconductor die;
at least another group of conductive solder bumps laterally offset from and on a first side of the centerline and operably coupled only with the integrated circuitry of the first semiconductor die; and
at least a further group of conductive solder bumps laterally offset from and on a second side of the centerline opposite the first side and operably coupled only with the integrated circuitry of the second semiconductor die.

2. The semiconductor device package of claim 1 , further comprising:
a substrate secured to a back side of the first semiconductor die and comprising conductive pads adjacent lateral edges of the first semiconductor die; and
conductive bond wires extending between and electrically and physically coupled to the conductive solder bumps and to the conductive pads of the substrate.

3. The semiconductor device package of claim 2 , wherein the substrate comprises at least one of an interposer substrate, a leadframe, and a circuit board.

4. The semiconductor device package of claim 1 , wherein the at least another group of conductive solder bumps is electrically coupled to data bond pads of the first semiconductor die and the at least a further group of conductive solder bumps is electrically coupled to data bond pads of the second semiconductor die.

5. The semiconductor device package of claim 1 , wherein the at least another group of conductive solder bumps is electrically coupled to command bond pads of the first semiconductor die and the at least a further group of conductive solder bumps is electrically coupled to command bond pads of the second semiconductor die.

6. The semiconductor device package of claim 1 , wherein:
the at least another group of conductive solder bumps comprises two groups of conductive solder bumps respectively electrically coupled to data bond pads and command bond pads of the first semiconductor die; and
the at least a further group of conductive solder bumps comprises two groups of conductive solder bumps respectively electrically coupled to data bond pads and command bond pads of the second semiconductor die.

7. The semiconductor device package of claim 1 , wherein the first semiconductor die and the second semiconductor die each comprise substantially the same integrated circuitry.

8. The semiconductor device package of claim 1 , further comprising:
a first electrically isolated region of the first semiconductor die laterally offset from and on the second side of the centerline, the first electrically isolated region physically coupled to the at least a further group of conductive solder bumps; and
a second electrically isolated region of the second semiconductor die laterally offset from and on the first side of the centerline, the second electrically isolated region physically coupled to the at least another group of conductive solder bumps.

9. The semiconductor device package of claim 8 , wherein the first electrically isolated region comprises at least one first dummy bond pad physically coupled to the at least a further group of conductive solder bumps and electrically isolated from the integrated circuitry of the first semiconductor die and the second electrically isolated region comprises at least one second dummy bond pad physically coupled to the at least another group of conductive solder bumps and electrically isolated from the integrated circuitry of the second semiconductor die.

10. The semiconductor device package of claim 1 , further comprising a dielectric material between the first and the second semiconductor dice and laterally surrounding the conductive solder bumps.

11. The semiconductor device package of claim 1 , further comprising an encapsulant over the first and the second semiconductor dice.

12. A semiconductor device package, comprising:
a first semiconductor device comprising an active surface, at least one set of bond pads over the active surface and along a centerline of the first semiconductor device, and at least one other set of bond pads over the active surface and laterally offset from the centerline of the first semiconductor device;
a second semiconductor device, comprising an active surface, at least one set of bond pads over the active surface and along a centerline of the second semiconductor device, and at least one other set of bond pads over the active surface and laterally offset from the centerline of the second semiconductor device;
a set of conductive solder bumps each physically and electrically coupled to the sets of bond pads along the respective centerlines of the first and second semiconductor devices;
another set of conductive solder bumps each physically and electrically coupled to one bond pad of the other set of bond pads laterally offset from the centerline of the first semiconductor device; and
a further set of conductive solder bumps each physically and electrically coupled to one bond pad of the other set of bond pads laterally offset from the centerline of the second semiconductor device.

13. The semiconductor device package of claim 12 , wherein the other sets of bond pads offset from the respective centerlines of the first and second semiconductor devices comprise bond pads configured to transmit data signals to integrated circuitry of the respective first and second semiconductor devices.

14. The semiconductor device package of claim 12 , wherein the other sets of bond pads offset from the respective centerlines of the first and second semiconductor devices comprise bond pads configured to transmit command signals to integrated circuitry of the respective first and second semiconductor devices.

15. The semiconductor device package of claim 12 , wherein sets of bond along the respective centerlines of the first and second semiconductor devices comprise bond pads configured to transmit at least one of address signals, electrical power, and command signals to integrated circuitry of the respective first and second semiconductor devices.

16. The semiconductor device package of claim 12 , further comprising a substrate attached to a back side surface of the first semiconductor device opposite the active surface thereof.

17. The semiconductor device package of claim 16 , further comprising conductive bond wires coupled to and extending between the substrate and respective conductive solder bumps of the set, other set, and further set of conductive solder bumps.

18. The semiconductor device package of claim 12 , wherein the respective at least one other set of bond pads of the first and second semiconductor devices is laterally offset from the respective centerlines substantially the same distance.

19. The semiconductor device package of claim 12 , wherein:
the first semiconductor device further comprises at least one first dummy bond pad electrically isolated from integrated circuitry of the first semiconductor device and aligned with and physically contacting the further set of conductive solder bumps;
the second semiconductor device further comprises at least one second dummy bond pad electrically isolated from integrated circuitry of the second semiconductor device and aligned with and physically contacting the another set of conductive so

Assignees

• Micron Technology Inc

Inventors

• Veches Anthony D
• Stephenson William R
• Moden Walter L

Classifications

• H10P90/1914

  using bonding · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10W90/754

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/752

  between stacked chips · CPC title

• H10W90/734

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title