Semiconductor device including a cap facing a semiconductor chip and a bump electrode provided between the semiconductor chip and the cap

US9502367B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9502367-B2
Application numberUS-201514642120-A
CountryUS
Kind codeB2
Filing dateMar 9, 2015
Priority dateMar 25, 2014
Publication dateNov 22, 2016
Grant dateNov 22, 2016

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A semiconductor device according to an embodiment includes a semiconductor chip, a cap disposed to face the semiconductor chip, and having a through-hole electrode arranged in a through hole, and a bump electrode provided between the semiconductor chip and the cap, wherein the bump electrode is in a protruding shape connecting the semiconductor chip and the through-hole electrode, and wherein at least a portion of the bump electrode is included in the through-hole electrode, and electrically connected thereto, so that the adhesive performance between the cap and the bump electrode can be increased.

First claim

Opening claim text (preview).

What is claimed is: 1. A semiconductor device comprising: a semiconductor chip; a cap disposed to face the semiconductor chip, and having a through-hole electrode arranged in a through hole; and a bump electrode provided between the semiconductor chip and the cap, wherein the bump electrode is in a protruding shape connecting the semiconductor chip and the through-hole electrode, the bump electrode including a protruding distal end portion and a bottom portion wider than the d…

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What does patent US9502367B2 cover?
A semiconductor device according to an embodiment includes a semiconductor chip, a cap disposed to face the semiconductor chip, and having a through-hole electrode arranged in a through hole, and a bump electrode provided between the semiconductor chip and the cap, wherein the bump electrode is in a protruding shape connecting the semiconductor chip and the through-hole electrode, and wherein a…
Who is the assignee on this patent?
Toshiba Kk
What technology area does this patent fall under?
Primary CPC classification H10W74/114. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Nov 22 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).