Continuous gate and fin spacer for advanced integrated circuit structure fabrication
US-2024038578-A1 · Feb 1, 2024 · US
Metal thin film resistor and process
US9502284B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9502284-B2 |
| Application number | US-201414548812-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 20, 2014 |
| Priority date | Dec 31, 2013 |
| Publication date | Nov 22, 2016 |
| Grant date | Nov 22, 2016 |
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Abstract
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An integrated circuit with a metal thin film resistor with an overlying etch stop layer. A process for forming a metal thin film resistor in an integrated circuit with the addition of one lithography step.
First claim
Opening claim text (preview).
What is claimed is: 1. A method for forming an integrated circuit comprising: depositing a first etch stop layer over a lower interconnect geometry; depositing a first dielectric layer on the first etch stop layer; depositing metal thin film resistor material on the first dielectric layer; depositing a second etch stop layer on the metal thin film resistor material; forming a resistor photoresist pattern with a resistor photoresist geometry on the second etch stop layer;…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9502284B2 cover?
- An integrated circuit with a metal thin film resistor with an overlying etch stop layer. A process for forming a metal thin film resistor in an integrated circuit with the addition of one lithography step.
- Who is the assignee on this patent?
- Texas Instruments Inc
- What technology area does this patent fall under?
- Primary CPC classification H10D1/474. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Nov 22 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).