Oxidizing the Source and Doping the Drain of a Thin-Film Transistor
US-2015372150-A1 · Dec 24, 2015 · US
Method of semiconductor manufacture utilizing layer arrangement to improve autofocus
US9502282B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9502282-B2 |
| Application number | US-201414586915-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 30, 2014 |
| Priority date | Jan 7, 2014 |
| Publication date | Nov 22, 2016 |
| Grant date | Nov 22, 2016 |
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Abstract
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In a method of manufacturing a semiconductor device using high-NA ArF liquid immersion exposure of a photoresist, a layer arrangement is provided capable of increasing reflection of a reference beam in an oblique incidence autofocus optical system, thereby enhancing autofocus and making it possible to reduce variation in the diameter of a contact hole.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of manufacturing a semiconductor integrated circuit device comprising the steps of: (a) forming a first silicon nitride-based insulating film over a first main surface of a semiconductor wafer; (b) forming a first silicon oxide-based insulating film over the first silicon nitride-based insulating film; (c) forming a second silicon nitride-based insulating film over the first silicon oxide-based insulating film; d) applying a carbon-rich film d…
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- H10P76/2043Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9502282B2 cover?
- In a method of manufacturing a semiconductor device using high-NA ArF liquid immersion exposure of a photoresist, a layer arrangement is provided capable of increasing reflection of a reference beam in an oblique incidence autofocus optical system, thereby enhancing autofocus and making it possible to reduce variation in the diameter of a contact hole.
- Who is the assignee on this patent?
- Renesas Electronics Corp
- What technology area does this patent fall under?
- Primary CPC classification H10P76/2043. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Nov 22 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).