Semiconductor fin structures and methods for forming the same
US-2016027903-A1 · Jan 28, 2016 · US
Semiconductor device and method for fabricating the same
US9502259B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9502259-B2 |
| Application number | US-201414533105-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 5, 2014 |
| Priority date | Oct 9, 2014 |
| Publication date | Nov 22, 2016 |
| Grant date | Nov 22, 2016 |
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- Title
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- Abstract
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Abstract
Official abstract text for this publication.
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a fin-shaped structure on the substrate; forming a cap layer on the fin-shaped structure; removing part of the cap layer on top of the fin-shaped structure; removing part of the fin-shaped structure; removing the remaining cap layer; and removing part of the remaining fin-shaped structure.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor device, comprising: a substrate; and a fin-shaped structure having a top portion and a bottom portion on the substrate, wherein the top surface of the bottom portion is greater than the bottom surface of the top portion and the fin-shaped structure comprises a source/drain region. 2. The semiconductor device of claim 1 , further comprising a shallow trench isolation (STI) around the fin-shaped structure. 3. The semiconductor device of claim 2 , wherein the top surface of the bottom portion is even with the top surface of the STI. 4. The semiconductor device of claim 1 , wherein the top portion comprises two concave arcs opposite to each other. 5. The semiconductor device of claim 1 , wherein the top portion comprises two side surfaces, and the slope of the two side surfaces are different from the slope of the bottom portion.
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Classifications
Cleaning during device manufacture · CPC title
by chemical means · CPC title
characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask · CPC title
characterised by their behaviour during the process, e.g. soluble masks or redeposited masks · CPC title
- H10P50/692Primary
characterised by their composition, e.g. multilayer masks or materials · CPC title
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- What does patent US9502259B2 cover?
- A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a fin-shaped structure on the substrate; forming a cap layer on the fin-shaped structure; removing part of the cap layer on top of the fin-shaped structure; removing part of the fin-shaped structure; removing the remaining cap layer; and removing part of the remaining fin…
- Who is the assignee on this patent?
- United Microelectronics Corp
- What technology area does this patent fall under?
- Primary CPC classification H10P50/692. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Nov 22 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).