Field-effect transistor (FET) with self-aligned ferroelectric capacitor and methods of fabrication
US-12166122-B2 · Dec 10, 2024 · US
US9502257B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9502257-B2 |
| Application number | US-201414337418-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 22, 2014 |
| Priority date | Apr 23, 2014 |
| Publication date | Nov 22, 2016 |
| Grant date | Nov 22, 2016 |
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A non-volatile memory device and a method of manufacturing the non-volatile memory device, where the non-volatile memory device includes a floating gate insulating layer and a floating gate disposed on a substrate, a dielectric layer formed perpendicular to the floating gate insulating layer and at two sides of the floating gate, and a first control gate at a first side of the dielectric layer distal from the floating gate and a second control gate at a second side of the dielectric layer distal from the floating gate, wherein the first control gate and the second control gate are connected to each other, and a second width of the second control gate is wider than a first width of the first control gate. A length of a control gate of a non-volatile memory device may be extended to effectively preventing the generation of leakage current when a control gate is off.
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What is claimed is: 1. A non-volatile memory device, the device comprising: a floating gate insulating layer disposed on a substrate; a floating gate insulated from the substrate by the floating gate insulating layer; a first dielectric region formed perpendicular to the floating gate insulating layer on a first sidewall of the floating gate; a second dielectric region formed perpendicular to the floating gate insulating layer on a second sidewall of the floating gate; a f…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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