ZrAION films

US9502256B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9502256-B2
Application numberUS-201614990214-A
CountryUS
Kind codeB2
Filing dateJan 7, 2016
Priority dateAug 3, 2006
Publication dateNov 22, 2016
Grant dateNov 22, 2016

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Abstract

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Atomic layer deposition (ALD) can be used to form a dielectric layer of zirconium aluminum oxynitride (ZrAlON) for use in a variety of electronic devices. Forming the dielectric layer may include depositing zirconium oxide using atomic layer deposition and precursor chemicals, followed by depositing aluminum nitride using precursor chemicals, and repeating. The dielectric layer may be used as the gate insulator of a MOSFET, a capacitor dielectric, and a tunnel gate insulator in flash memories.

First claim

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What is claimed is: 1. A method comprising: forming zirconium aluminum oxynitride by forming an insulating zirconium compound and an insulating aluminum compound using a monolayer by monolayer sequencing technique and processing the formed insulating zirconium compound and the formed insulating aluminum compound into zirconium aluminum oxynitride; and forming an electrically conductive material adjacent the zirconium aluminum oxynitride. 2. The method of c…

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What does patent US9502256B2 cover?
Atomic layer deposition (ALD) can be used to form a dielectric layer of zirconium aluminum oxynitride (ZrAlON) for use in a variety of electronic devices. Forming the dielectric layer may include depositing zirconium oxide using atomic layer deposition and precursor chemicals, followed by depositing aluminum nitride using precursor chemicals, and repeating. The dielectric layer may be used as t…
Who is the assignee on this patent?
Micron Technology Inc
What technology area does this patent fall under?
Primary CPC classification H10P14/69397. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Nov 22 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).