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US-2015048316-A1 · Feb 19, 2015 · US
Manufacturing method of silicon carbide semiconductor apparatus
US9502250B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9502250-B2 |
| Application number | US-201615018214-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 8, 2016 |
| Priority date | Feb 10, 2015 |
| Publication date | Nov 22, 2016 |
| Grant date | Nov 22, 2016 |
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Abstract
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In a surface of a SiC semiconductor portion, a surface electrode film including a first electrode film composed of nickel and a second electrode film composed of nickel, silicon, and tantalum, are sequentially stacked. The first electrode film has a thickness of 3 nm or more and 10 nm or less. Composition of the second electrode film is within a range from 60Ni 30Si 10Ta to 53Ni 27Si 20Ta, expressed in at %. Next, by heat treatment, the SiC semiconductor portion and the first electrode film are reacted to generate a nickel silicide film, and an ohmic contact is formed. At this time, excess carbon atoms that have separated from the SiC semiconductor portion bond to tantalum atoms in the second electrode film and are silicided, making deposition thereof in the surface of the surface electrode film difficult. Thereafter, a wiring film is formed in the surface of the surface electrode film.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of manufacturing a silicon carbide semiconductor apparatus and forming an ohmic contact of a silicon carbide semiconductor portion including silicon atoms and carbon atoms and a surface electrode film formed in a surface of the silicon carbide semiconductor portion, the manufacturing method comprising: forming, in a surface of the silicon carbide semiconductor portion, a first electrode film comprised of nickel as the surface electrode film; formi…
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Electricity · mapped topic
- H10D64/0115Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9502250B2 cover?
- In a surface of a SiC semiconductor portion, a surface electrode film including a first electrode film composed of nickel and a second electrode film composed of nickel, silicon, and tantalum, are sequentially stacked. The first electrode film has a thickness of 3 nm or more and 10 nm or less. Composition of the second electrode film is within a range from 60Ni 30Si 10Ta to 53Ni 27Si 20Ta, expr…
- Who is the assignee on this patent?
- Fuji Electric Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10D64/0115. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Nov 22 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).