Nonvolatile memory transistor and device including the same
US-9379319-B2 · Jun 28, 2016 · US
US9502094B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9502094-B2 |
| Application number | US-201313892479-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 13, 2013 |
| Priority date | May 25, 2012 |
| Publication date | Nov 22, 2016 |
| Grant date | Nov 22, 2016 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
To provide a memory element which keeps a stored logic state even without supply of power. To increase an effect of reducing power consumption by facilitating stop of supply of power to the memory element for a short time. Data (potential) held in a node in a logic circuit can be swiftly saved on a node where one of a source and a drain of the transistor and one electrode of the capacitor included in a memory circuit are connected by lowering a potential of the other electrode of a capacitor before a transistor is turned on. By making a potential of the other electrode of the capacitor when the transistor is in an off state higher than a potential of the other electrode of the capacitor when the transistor is in an on state, a potential of the node can be reliably held even without supply of power.
Opening claim text (preview).
What is claimed is: 1. A method for driving a memory element comprising a logic circuit configured to hold different potentials in a first node and a second node; a first memory circuit comprising a first transistor and a first capacitor; and a second memory circuit comprising a second transistor and a second capacitor, wherein the first transistor and the second transistor each include indium in a semiconductor layer in which a channel is formed, wherein one of a source and a d…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Physics · mapped topic
Physics · mapped topic
Related publications grouped by family.
Free tools are coming soon. Tell us what you want to track and we'll notify you.
Answers are generated from the same data shown on this page.