Method for driving memory element

US9502094B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9502094-B2
Application numberUS-201313892479-A
CountryUS
Kind codeB2
Filing dateMay 13, 2013
Priority dateMay 25, 2012
Publication dateNov 22, 2016
Grant dateNov 22, 2016

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  2. Abstract

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  5. First independent claim

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Abstract

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To provide a memory element which keeps a stored logic state even without supply of power. To increase an effect of reducing power consumption by facilitating stop of supply of power to the memory element for a short time. Data (potential) held in a node in a logic circuit can be swiftly saved on a node where one of a source and a drain of the transistor and one electrode of the capacitor included in a memory circuit are connected by lowering a potential of the other electrode of a capacitor before a transistor is turned on. By making a potential of the other electrode of the capacitor when the transistor is in an off state higher than a potential of the other electrode of the capacitor when the transistor is in an on state, a potential of the node can be reliably held even without supply of power.

First claim

Opening claim text (preview).

What is claimed is: 1. A method for driving a memory element comprising a logic circuit configured to hold different potentials in a first node and a second node; a first memory circuit comprising a first transistor and a first capacitor; and a second memory circuit comprising a second transistor and a second capacitor, wherein the first transistor and the second transistor each include indium in a semiconductor layer in which a channel is formed, wherein one of a source and a d…

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What does patent US9502094B2 cover?
To provide a memory element which keeps a stored logic state even without supply of power. To increase an effect of reducing power consumption by facilitating stop of supply of power to the memory element for a short time. Data (potential) held in a node in a logic circuit can be swiftly saved on a node where one of a source and a drain of the transistor and one electrode of the capacitor inclu…
Who is the assignee on this patent?
Semiconductor Energy Lab
What technology area does this patent fall under?
Primary CPC classification G11C14/0063. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Nov 22 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).