Monomer, polymer, resist composition, and patterning process
US-9256127-B2 · Feb 9, 2016 · US
US9500949B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9500949-B2 |
| Application number | US-201514625892-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 19, 2015 |
| Priority date | Mar 7, 2014 |
| Publication date | Nov 22, 2016 |
| Grant date | Nov 22, 2016 |
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The present invention provides a chemically-amplified positive resist composition including a sulfonium salt capable of providing a pattern having an extremely high resolution with low line edge roughness, and also provides a resist patterning process using the same. The present invention was accomplished by a chemically-amplified positive resist composition including: (A) a salt represented by the following general formula (1); and (B) a resin containing a repeating unit represented by the following general formula (U-1) that dissolves by acid action and increases solubility in an alkaline developer, and a resist patterning process using the same.
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What is claimed is: 1. A chemically-amplified positive resist composition for high energy beam exposure comprising: (A) a salt represented by the following general formula (1); and (B) a resin containing a repeating unit represented by the following general formula (U-1) that dissolves by acid action and increases solubility in an alkaline developer, wherein R 0 represents a h…
Physics · mapped topic
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
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