Optical waveguide to be carried by a semiconductor material including a plurality of parallel strips of alternating conductivity types and related methods

Patent metadata

Field	Value
Publication number	US-9500805-B2
Application number	US-201514656981-A
Country	US
Kind code	B2
Filing date	Mar 13, 2015
Priority date	Mar 31, 2014
Publication date	Nov 22, 2016
Grant date	Nov 22, 2016

Abstract

An optical waveguide in a semiconductor material, may include, between two adjacent portions of the waveguide, a plurality of parallel strips of alternating conductivity types forming a plurality of opposing bipolar junctions between the two adjacent portions.

First claim

What is claimed is:

1. An optical waveguide to be carried by a semiconductor material comprising:
first and second adjacent waveguide portions; and
a plurality of parallel strips of alternating conductivity types between the first and second adjacent waveguide portions and defining a plurality of opposing bipolar junctions, said plurality of parallel strips being doped over an entire height of the first and second adjacent waveguide portions, said plurality of parallel strips being configured transversely to define a longitudinal narrowed conductive zone between the first and second adjacent waveguide portions.

2. The optical waveguide according to claim 1 , wherein at least one of the plurality of parallel strips is electrically floating.

3. An optical waveguide comprising:
first and second adjacent waveguide segments; and
a plurality of parallel strips of alternating conductivity types between the first and second adjacent waveguide segments and defining a plurality of opposing bipolar junctions, said plurality of parallel strips being doped over an entire height of the first and second adjacent waveguide segments;
said plurality of parallel strips comprising a first plurality and a second plurality of parallel strips, the first and second pluralities of parallel strips being transverse to a longitudinal axis of the optical waveguide, and laterally spaced apart from each other to define a conductive zone between the first and second adjacent waveguide segments.

4. The optical waveguide according to claim 3 , wherein at least one of the plurality of parallel strips is electrically floating.

5. The optical waveguide according to claim 3 , wherein the first and second pluralities of parallel strips have an alternating conductivity type relative to each other.

6. The optical waveguide according to claim 3 , wherein each of said first and second waveguide segments comprises first and second wing portions and a central zone therebetween.

7. The optical waveguide according to claim 6 , wherein each of said first and second waveguide segments further comprises a distal potion having an opposite conductivity type than the first and second wings portions the central zone.

8. The optical waveguide according to claim 3 , wherein said first and second waveguide segments each have a different conductivity type.

9. A method of making an optical waveguide to be carried by a semiconductor material, the method comprising:
forming a plurality of parallel strips of alternating type conductivity types between first and second adjacent waveguide portions to define a plurality of opposing bipolar junctions, the plurality of parallel strips being doped over an entire height of the first and second adjacent waveguide portions, the plurality of strips being formed transversely to define a longitudinal narrowed conductive zone between the first and second adjacent waveguide portions.

10. The method according to claim 9 , wherein at least one of the plurality of parallel strips is formed to be electrically floating.

Assignees

• St Microelectronics Sa
• St Microelectronics Crolles 2 Sas

Inventors

• Manouvrier Jean-Robert
• Lemaitre Patrick
• Carpentier Jean-Francois

Classifications

• H10D18/00

  Thyristors · CPC title

• G02B6/13

  Integrated optical circuits characterised by the manufacturing method · CPC title

• G02B6/12 Primary

  of the integrated circuit kind (electric integrated circuits H10B, H10D84/00 - H10D89/00, H10F19/00, H10F39/00, H10H29/00, H10K19/00, H10K39/00, H10K59/00, H10N19/00, H10N39/00, H10N59/00, H10N69/00, H10N79/00, H10N89/00) · CPC title

• H01L29/74

  Electricity · mapped topic

• G02B6/132 Primary

  by deposition of thin films · CPC title