Method of extracting properties of a layer on a wafer
US-2024234216-A9 · Jul 11, 2024 · US
Surface inspection apparatus for semiconductor chips
US9500599B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9500599-B2 |
| Application number | US-201514603809-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 23, 2015 |
| Priority date | Jan 23, 2014 |
| Publication date | Nov 22, 2016 |
| Grant date | Nov 22, 2016 |
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Abstract
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A surface inspection apparatus and method of inspecting chip surfaces includes a laser generator that generates a periodic CW laser and is transformed into an inspection laser beam having a beam size smaller than a surface size of the chip. Thus, the inspection laser beam is irradiated onto a plurality of the semiconductor chips such that the semiconductor chips are partially and simultaneously heated. Thermal waves are detected in response to the inspection laser beam and thermal images are generated corresponding to the thermal waves. A surface image is generated by a lock-in thermography technique and hold exponent analysis of the thermal image, thereby generating surface image in which a surface defect is included. Time and accuracy of the surface inspection process is improved.
First claim
Opening claim text (preview).
What is claimed is: 1. An apparatus for inspecting surfaces of semiconductor chips, comprising: a laser generator generating a periodic continuous wave (CW) laser; a laser controller transforming the periodic CW laser into an inspection laser beam of which a beam size is smaller than a surface size of the semiconductor chip and irradiating the inspection laser beam onto a plurality of the semiconductor chips such that the semiconductor chips are partially and simultaneously heat…
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Physics · mapped topic
Physics · mapped topic
Electricity · mapped topic
Physics · mapped topic
Physics · mapped topic
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- What does patent US9500599B2 cover?
- A surface inspection apparatus and method of inspecting chip surfaces includes a laser generator that generates a periodic CW laser and is transformed into an inspection laser beam having a beam size smaller than a surface size of the chip. Thus, the inspection laser beam is irradiated onto a plurality of the semiconductor chips such that the semiconductor chips are partially and simultaneously…
- Who is the assignee on this patent?
- Samsung Electronics Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification G01N21/9501. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Nov 22 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).