ICP emission spectrometer

Patent metadata

Field	Value
Publication number	US-9500524-B2
Application number	US-201514674052-A
Country	US
Kind code	B2
Filing date	Mar 31, 2015
Priority date	Mar 31, 2014
Publication date	Nov 22, 2016
Grant date	Nov 22, 2016

Abstract

An ICP emission spectrometer is schematically configured to include an inductively coupled plasma generation unit, a light condensing unit, a spectroscope, a two-dimensional detection unit and a controller. The two-dimensional detection unit includes a CCD image sensor which has multiple pixels laid in a planar shape and detects emission light by causing the emission light emitted from the spectroscope to be imaged on the multiple pixels. Then, the controller determines a pixel used in detecting the emission light among the multiple pixels in accordance with an imaging shape of detection-targeted emission light.

First claim

What is claimed is:

1. An ICP emission spectrometer comprising:
an inductively coupled plasma generation unit configured to obtain atomic emission lines by atomizing or ionizing an analysis-targeted element using inductively coupled plasma;
a spectroscope configured to diffract and detect the atomic emission lines, wherein the spectroscope comprises a diffraction grating;
a two-dimensional detection unit having multiple pixels laid in a planar shape and configured to detect emission light by causing the emission light emitted from the spectroscope to be imaged on the multiple pixels; and
a controller configured to determine a pixel used in detecting the emission light among the multiple pixels in accordance with an imaging shape of the emission light as a detection target,
wherein the two-dimensional detection unit comprises an image sensor having a detection surface, on which the multiple pixels are formed, and is configured to detect the emission light emitted from the spectroscope and imaged on the detection surface,
wherein from among the multiple pixels, a pixel at a position which conforms to the imaging shape of the emission light imaged on the detection surface is determined as the pixel used in detecting the emission light, and
wherein the controller is configured to drive the diffraction grating to move the imaging shape of the emission light imaged on the detection surface and to determine a pixel of the multiple pixels to be exposed so as to follow the imaging shape of the emission light to obtain a wavelength profile of the emission light.

2. The ICP emission spectrometer according to claim 1 , wherein the controller is configured to measure background intensity, based on a detection intensity of non-used pixels, wherein the number of non-used pixels is the same as the number of pixels used in detecting the emission light.

3. An ICP emission spectrometer comprising:
an inductively coupled plasma generation unit configured to obtain atomic emission lines by atomizing or ionizing an analysis-targeted element using inductively coupled plasma;
a spectroscope configured to diffract and detect the atomic emission lines;
a two-dimensional detection unit having multiple pixels laid in a planar shape and configured to detect emission light by causing the emission light emitted from the spectroscope to be imaged on the multiple pixels; and
a controller configured to:
determine a pixel used in detecting the emission light among the multiple pixels in accordance with an imaging shape of the emission light as a detection target; and
measure background intensity based on detection intensity of non-used pixels, wherein a number of non-used pixels is the same as a number of pixels used in detecting the emission light,

wherein the two-dimensional detection unit comprises an image sensor having a detection surface, on which the multiple pixels are formed, and configured to detect the emission light emitted from the spectroscope and imaged on the detection surface,
wherein from among the multiple pixels, a pixel at a position which conforms to the imaging shape of the emission light imaged on the detection surface is determined as the pixel used in detecting the emission light,
wherein the spectroscope comprises a diffraction grating,
wherein the controller is configured to drive the diffraction grating to move the imaging shape of the emission light imaged on the detection surface so as to obtain a wavelength profile of the emission light, and
wherein when a position of the imaging shape of the emission light on the detection surface overlaps with a position of an estimated shape on predetermined pixels of the multiple pixels while driving the diffraction grating to move the imaging shape of the emission light, the estimated shape having been determined by a prior analysis or a prior measurement, the controller is configured to determine an overlapping position of the imaging shape of the emission light and the estimated shape as a peak top position of the wavelength profile.

4. An ICP emission spectrometer comprising:
an inductively coupled plasma generation unit configured to obtain atomic emission lines by atomizing or ionizing an analysis-targeted element using inductively coupled plasma;
a spectroscope comprising a diffraction grating, wherein the spectroscope is configured to diffract and detect the atomic emission lines;
a two-dimensional detection unit comprising an image sensor having a detection surface on which multiple pixels are laid in a planar shape, wherein the two-dimensional detection unit is configured to detect emission light by causing the emission light emitted from the spectroscope to be imaged on the multiple pixels;
a controller configured to:
determine a pixel used in detecting the emission light from among the multiple pixels at a position which conforms to an imaging shape of the emission light on the detection surface;
drive the diffraction grating to move the imaging shape of the emission light imaged on the detection surface so as to obtain a wavelength profile of the emission light,

wherein when a position of the imaging shape of the emission light on the detection surface overlaps with a position of an estimated shape on predetermined pixels of the multiple pixels while driving the diffraction grating to move the imaging shape of the emission light, the estimated shape having been determined by a prior analysis or a prior measurement, the controller is configured to determine an overlapping position of the imaging shape of the emission light and the estimated shape as a peak top position of the wavelength profile.

Assignees

• Hitachi High-Tech Science Corp

Inventors

• Matsuzawa Osamu

Classifications

• G01N21/73

  using plasma burners or torches · CPC title

• G01N21/68

  using high frequency electric fields · CPC title

• G01J3/443 Primary

  Emission spectrometry · CPC title

• G01J3/06

  Scanning arrangements {arrangements for order-selection} · CPC title