Methods for the additive manufacturing of semiconductor and crystal materials

Patent metadata

Field	Value
Publication number	US-9499406-B1
Application number	US-201514752048-A
Country	US
Kind code	B1
Filing date	Jun 26, 2015
Priority date	Jun 26, 2015
Publication date	Nov 22, 2016
Grant date	Nov 22, 2016

Abstract

A method for the additive manufacturing of inorganic crystalline materials, including: physically combining a plurality of starting materials that are used to form an inorganic crystalline compound to be used as one or more of a semiconductor, scintillator, laser crystal, and optical filter; heating or melting successive regions of the combined starting materials using a directed heat source having a predetermined energy characteristic, thereby facilitating the reaction of the combined starting materials; and allowing each region of the combined starting materials to cool in a controlled manner, such that the desired inorganic crystalline compound results. The method also includes, prior to heating or melting the successive regions of the combined starting materials using the directed heat source, heating the combined starting materials to facilitate initial reaction of the combined starting materials. The method further includes translating the combined starting materials and/or the directed heat source between successive locations. The method still further includes controlling the mechanical, electrical, photonic, and/or optical properties of the inorganic crystalline compound.

First claim

What is claimed is:

1. A method for the additive manufacturing of inorganic crystalline materials, comprising:
physically combining a plurality of starting materials that are used to form an inorganic crystalline compound;
heating or melting successive regions of the combined starting materials using a directed heat source having a predetermined energy characteristic, thereby facilitating the reaction of the combined starting materials; and
allowing each region of the combined starting materials to cool in a controlled manner, such that the desired inorganic crystalline compound results.

2. The method of claim 1 , further comprising, prior to heating or melting the successive regions of the combined starting materials using the directed heat source, heating the combined starting materials in an oven or heater to facilitate initial reaction of the combined starting materials.

3. The method of claim 1 , further comprising translating the combined starting materials and/or the directed heat source between successive locations.

4. The method of claim 1 , further comprising controlling directed heat source energy exposure and/or cooling profile to control one or more of the mechanical, electrical, photonic, and optical properties of the inorganic crystalline compound.

5. The method of claim 1 , wherein the directed heat source comprises one of a laser, an electron beam, and an infrared radiation source.

6. The method of claim 1 , wherein the inorganic crystalline compound is configured for use as one of a semiconductor, scintillator, laser crystal, and an optical filter.

7. A method for the additive manufacturing of inorganic crystalline materials, comprising:
physically combining a plurality of starting materials that are used to form an inorganic crystalline compound;
heating the combined starting materials in an oven or heater to facilitate initial reaction of the combined starting materials;
heating or melting successive regions of the combined starting materials using a directed heat source having a predetermined energy characteristic, thereby facilitating the reaction of the combined starting materials; and
allowing each region of the combined starting materials to cool in a controlled manner, such that the desired inorganic crystalline compound results.

8. The method of claim 7 , further comprising translating the combined starting materials and/or the directed heat source between successive locations.

9. The method of claim 7 , further comprising controlling directed heat source energy exposure and/or cooling profile to control one or more of the mechanical, electrical, photonic, and optical properties of the inorganic crystalline compound.

10. The method of claim 7 , wherein the directed heat source comprises one of a laser, an electron beam, and an infrared radiation source.

11. The method of claim 7 , wherein the inorganic crystalline compound is configured for use as one of a semiconductor, scintillator, laser crystal, and an optical filter.

Assignees

• Stowe Ashley C
• Speight Douglas
• Cons Nuclear Security Llc

Inventors

• Stowe Ashley C
• Speight Douglas

Classifications

• B01J19/121

  Coherent waves, e.g. laser beams (lasers per se H01S3/00) · CPC title

• B01J19/085

  Electron beams only · CPC title

• B01J2219/1203

  Incoherent waves · CPC title

• C01B19/002 Primary

  Compounds containing, besides selenium or tellurium, more than one other element, with -O- and -OH not being considered as anions · CPC title

• C09K11/881

  Chalcogenides · CPC title