Bidirectional power transfer system, method of operating the same, and wireless power system
US-12021391-B2 · Jun 25, 2024 · US
Threshold voltage-tracking bias circuit for radio frequency power amplifier
US9496830B1 · US · B1
| Field | Value |
|---|---|
| Publication number | US-9496830-B1 |
| Application number | US-201314095890-A |
| Country | US |
| Kind code | B1 |
| Filing date | Dec 3, 2013 |
| Priority date | Dec 3, 2013 |
| Publication date | Nov 15, 2016 |
| Grant date | Nov 15, 2016 |
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- Title
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- Abstract
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Abstract
Official abstract text for this publication.
Various embodiments provide a radio frequency (RF) power amplifier (PA) circuit including an RF PA and a bias circuit. The bias circuit may provide a direct current (DC) bias voltage to the RF PA. The bias circuit may include a bias transistor, and the RF PA may include an amplifier transistor. The bias circuit may further include a diode coupled between a gate terminal of the amplifier transistor and a drain terminal of the bias transistor to pass the DC bias voltage to the gate terminal of the amplifier transistor and to level-shift the DC bias voltage at the gate terminal of the amplifier transistor to be higher than a DC voltage level at the drain terminal of the bias transistor.
First claim
Opening claim text (preview).
What is claimed is: 1. A circuit comprising: an amplifier transistor to receive a radio frequency (RF) input signal at a gate terminal of the amplifier transistor and to amplify the RF input signal; and a bias circuit to generate a direct current (DC) bias voltage and including a bias transistor having a drain terminal; a diode having a reverse terminal coupled to the gate terminal of the amplifier transistor and a forward terminal coupled to the drain terminal of the bias tr…
Assignees
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Classifications
- H03F3/19Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9496830B1 cover?
- Various embodiments provide a radio frequency (RF) power amplifier (PA) circuit including an RF PA and a bias circuit. The bias circuit may provide a direct current (DC) bias voltage to the RF PA. The bias circuit may include a bias transistor, and the RF PA may include an amplifier transistor. The bias circuit may further include a diode coupled between a gate terminal of the amplifier transis…
- Who is the assignee on this patent?
- Triquint Semiconductor Inc, Qorvo Us Inc
- What technology area does this patent fall under?
- Primary CPC classification H03F3/19. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Nov 15 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).