Light emitting device and light emitting device package

Patent metadata

Field	Value
Publication number	US-9496457-B2
Application number	US-201314391740-A
Country	US
Kind code	B2
Filing date	Apr 26, 2013
Priority date	Apr 27, 2012
Publication date	Nov 15, 2016
Grant date	Nov 15, 2016

Abstract

Disclosed are a light emitting device, a method of manufacturing the same, a light emitting device package, and a lighting system. The light emitting device includes a substrate; a plurality of conductive dielectric nano rods spaced apart from each other on the substrate; light emitting structures on the conductive dielectric nano rods, respectively; and a carbon nano electrode layer on the light emitting structures.

First claim

The invention claimed is:

1. A light emitting device comprising:
a substrate;
a plurality of conductive dielectric nano rods spaced apart from each other on the substrate;
light emitting structures including an active layer on the conductive dielectric nano rods, respectively;
a carbon nano electrode layer on the light emitting structures;
an electrode layer disposed at a lateral side of the light emitting structures, and
a second insulating layer interposed between the light emitting structures on the conductive dielectric nano rods,
wherein the light emitting structures surround the conductive dielectric nano rods, respectively, and
wherein a top surface of the second insulating layer is higher than a top most surface of the active layer.

2. The light emitting device of claim 1 , wherein each of the light emitting structures comprises:
a first conductive semiconductor layer surrounding the conductive dielectric nano rod;
the active layer on the first conductive semiconductor layer; and
a second conductive semiconductor layer on the active layer.

3. The light emitting device of claim 2 , wherein the active layer surrounds the first conductive semiconductor layer and the second conductive semiconductor layer surrounds the active layer.

4. The light emitting device of claim 2 , further comprising a nitride semiconductor layer between the substrate and the conductive dielectric nano rod.

5. The light emitting device of claim 4 , further comprising a first insulating layer on the nitride semiconductor layer, and the first insulating layer comprises a hole,
the conductive dielectric nano rod is on the nitride semiconductor layer through the hole.

6. The light emitting device of claim 2 , wherein the conductive dielectric nano rod comprises a ZnO nano rod.

7. The light emitting device of claim 2 , wherein the carbon nano electrode layer comprises a graphene layer.

8. The light emitting device of claim 2 , wherein the electrode layer is disposed at a lateral side of the second conductive semiconductor layer of the light emitting structures.

9. The light emitting device of claim 8 , wherein the electrode layer surrounds a lateral side of the second conductive semiconductor layer.

10. The light emitting device of claim 8 , wherein the electrode layer is electrically connected to the carbon nano electrode layer.

11. The light emitting device of claim 8 , wherein the electrode layer is further formed on a top surface of the second conductive semiconductor layer.

12. The light emitting device of claim 2 , wherein each the second conductive semiconductor layer is separated by the second insulating layer.

13. A light emitting device package comprising:
a light emitting device according to claim 1 and
a package body where the light emitting device is disposed.

14. The light emitting device package of claim 13 , wherein the electrode layer is electrically connected to the carbon nano electrode layer.

15. The light emitting device of claim package 13 , wherein the electrode layer is further formed on a top surface of the second conductive semiconductor layer.

16. A light emitting device comprising:
a substrate;
a plurality of conductive dielectric nano rods spaced apart from each other on the substrate;
light emitting structures including an active layer on the conductive dielectric nano rods, respectively;
a carbon nano electrode layer on the light emitting structures;
an electrode layer disposed at a lateral side of the light emitting structures, and
a second insulating layer interposed between the light emitting structures on the conductive dielectric nano rods,
wherein the light emitting structures have a coaxial structure, and
wherein a top surface of the second insulating layer is higher than a top most surface of the active layer.

17. The light emitting device of claim 16 , wherein each of the light emitting structures comprises:
a first conductive semiconductor layer surrounding the conductive dielectric nano rod;
the active layer on the first conductive semiconductor layer; and
a second conductive semiconductor layer on the active layer,
wherein the first conductive semiconductor layer, the active layer and the second conductive semiconductor layer are coaxially formed about the conductive dielectric nano rod.

18. The light emitting device of claim 17 , further comprising a nitride semiconductor layer between the substrate and the conductive dielectric nano rod.

19. The light emitting device of claim 17 , further comprising an first insulating layer interposed between the conductive dielectric nano rods.

20. The light emitting device of claim 17 , wherein each the second conductive semiconductor layer is separated by the second insulating layer.

Assignees

• Lg Innotek Co Ltd

Inventors

• Choung Jae Woong

Classifications

• H10W90/756

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title

• H10H20/823

  comprising only Group II-VI materials, e.g. ZnO · CPC title

• H10H20/8316

  Multi-layer electrodes comprising at least one discontinuous layer · CPC title

• H10H20/832

  characterised by their material · CPC title