Photoelectric conversion device and method for manufacturing photoelectric conversion device

Patent metadata

Field	Value
Publication number	US-9496433-B2
Application number	US-201314436075-A
Country	US
Kind code	B2
Filing date	Oct 10, 2013
Priority date	Oct 16, 2012
Publication date	Nov 15, 2016
Grant date	Nov 15, 2016

Abstract

The inventive photoelectric conversion device includes a substrate, a lower electrode layer provided on the substrate, a CIGS compound semiconductor layer provided on the lower electrode layer as covering the lower electrode layer, and a transparent electrode layer provided on the compound semiconductor layer, wherein the compound semiconductor layer has a maximum Ga content variation of not less than 5% as measured in a layer thickness direction, and a maximum In content variation of not less than 6% as measured in the layer thickness direction.

First claim

The invention claimed is:

1. A photoelectric conversion device comprising:
a substrate;
a lower electrode layer provided on the substrate;
a CIGS compound semiconductor layer provided on the lower electrode layer as covering the lower electrode layer; and
a transparent electrode layer provided on the compound semiconductor layer;
wherein the compound semiconductor layer has a Ga content having a maximum variation of not less than 5% as measured in a layer thickness direction, and has an In content having a maximum variation of not less than 6% as measured in the layer thickness direction, the Ga content and the In content varying continuously in the layer thickness direction.

2. The photoelectric conversion device according to claim 1 , wherein the compound semiconductor layer includes an intermediate portion in which the In content is greater than the Ga content, and an end portion in which the Ga content is greater than the In content, the end portion being disposed on an upper side and/or a lower side of the intermediate portion with respect to the layer thickness direction.

3. The photoelectric conversion device according to claim 2 , wherein a difference in Ga content between the end portion and the intermediate portion is not less than 5%, and a difference in In content between the intermediate portion and the end portion is not less than 6%.

4. The photoelectric conversion device according to claim 2 , wherein the intermediate portion has an In content of 14 at % to 20 at % and a Ga content of 0 at % to 4 at %.

5. The photoelectric conversion device according to claim 2 , wherein the intermediate portion has a Ga composition ratio (Ga/Ga+In) of 0 to 0.17 with respect to the total amount of Ga and In, and an In composition ratio (In/Ga+In) of 0.83 to 1with respect to the total amount of Ga and In.

6. The photoelectric conversion device according to claim 2 , wherein the end portion has a Ga content of 6 at % to 15 at %, and an In content of 0 at % to 8 at %.

7. The photoelectric conversion device according to claim 2 , wherein the end portion has a Ga composition ratio (Ga/Ga+In) of 0.65 to 1 with respect to the total amount of Ga and In, and an In composition ratio (In/Ga+In) of 0 to 0.35 with respect to the total amount of Ga and In.

8. The photoelectric conversion device according to claim 1 , wherein the compound semiconductor layer has an absorption wavelength of not less than 1200 nm.

9. The photoelectric conversion device according to claim 1 ,
wherein the lower electrode layer includes a plurality of lower electrode layers arranged in spaced relation,
wherein the compound semiconductor layer is disposed over the plurality of lower electrode layers as collectively covering the lower electrode layers, and include a plurality of compound semiconductor layer portions each defining a pixel.

10. The photoelectric conversion device according to claim 1 , wherein the lower electrode layer includes a single lower electrode layer.

11. The photoelectric conversion device according to claim 1 , further comprising a circuit portion provided between the substrate and the lower electrode layer.

12. The photoelectric conversion device according to claim 11 , wherein the circuit portion includes a CMOS field effect transistor.

13. The photoelectric conversion device according to claim 12 , wherein the CMOS field effect transistor includes a source layer and a drain layer formed selectively in a surface portion of the substrate, and a gate electrode disposed between the source layer and the drain layer.

14. The photoelectric conversion device according to claim 1 , wherein the transparent electrode layer is made of zinc oxide (ZnO) or indium tin oxide (ITO).

15. The photoelectric conversion device according to claim 1 , further comprising a buffer layer provided between the compound semiconductor layer and the transparent electrode layer.

16. The photoelectric conversion device according to claim 15 , wherein the buffer layer is made of CdS, ZnS, ZnO, (Zn z Mg 1-z )O(0≦z≦1), ZnSe or In 2 S 3 .

Assignees

• Rohm Co Ltd
• Nat Inst Advanced Ind Science & Tech

Inventors

• Maekawa Takuji
• Niki Shigeru
• Ishizuka Shogo
• Shibata Hajime

Classifications

• Y02E10/541

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• Y02E10/543

  Solar cells from Group II-VI materials · CPC title

• H01L31/18

  Electricity · mapped topic

• H01L31/10

  Electricity · mapped topic

• Y02P70/521

  Cross-Sectional Technologies · mapped topic